UnitedSiC Expands SiC JFET Portfolio with Gen3 1200V and 650V Options
UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, announces its Generation 3 1200 V and 650 V silicon carbide JFETs, expanding its
UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, announces its Generation 3 1200 V and 650 V silicon carbide JFETs, expanding its existing unique portfolio of standalone normally-ON SiC JFETs.
The devices are normally-ON with zero voltage gate drive, making them particularly suited for applications such as very fast action, solid-state circuit breakers, and circuit protection generally where a default to an ON-state is necessary in the absence of gate power. The devices are also commonly used in series connection with a Si-MOSFET as robust ‘supercascodes’, which give all the advantages of wide band-gap technology with very high operating voltages and easy gate drive. Other applications include electronic loads, wireless charging synchronous rectification and power switches in low power flyback converters where the JFET in a cascode configuration provides for easy startup.
Markets addressed are circuit protection in rail, electric aircraft and traction, along with high voltage switching power conversion.
As devices, SiC JFETs have an extremely good RDSA figure of merit (normalized ON-resistance with die area), giving low insertion loss in circuit protection applications. The parts can be easily paralleled, due to their positive temperature coefficient of RDSON and flat gate threshold voltage curve over temperature. When operated in ‘linear’ mode, SiC JFETs exhibit a wide Safe Operating Area (SOA) without current crowding and current filament formation that other technologies suffer from, making them particularly suitable for electronic loads and current limiters. The absence of a gate oxide in the SiC JFETs gives the added benefits of radiation hardness and general robustness.
UnitedSiC uses its proprietary 6-inch wafer process in the fabrication of the devices with advanced wafer-thinning and die-attach techniques for excellent junction-to-case thermal resistance.
The new Generation 3 devices are coded:
- UJ3N120070K3S (PDF) (1200V 70 mΩ)
- UJ3N120035K3S (PDF) (1200 V 35 mΩ)
- UJ3N0650080K3S (PDF) (650 V 80 mΩ)
- UJ3N065025K3S (PDF) (650V 25 mΩ)
All of these options are available in the convenient TO-247-3L package.
“UnitedSiC’s SiC JFETs offer unbeatable system value when you need normally-ON, super robust devices,” said Anup Bhalla, VP Engineering at UnitedSiC. “The need for circuit protection is growing in tandem with the continuing advancement of power electronics. Very fast acting circuit breakers can simplify power circuitry in rail traction, ships and increasingly electronic aircraft, and SiC JFETs are the simplest, most efficient option for current limiting in these types of applications.”
UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC-DC converters and traction drives, as well as telecom/server power supplies, variable-speed motor drives, and solar PV inverters.