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SiC-based 60kW Interleaved Boost Converter Reference Design

SiC-based 60kW Interleaved Boost Converter Reference Design

GaN-on-Si 10W Fully-matched, Two-stage PA Features 40% Efficiency

GaN-on-Si 10W Fully-matched, Two-stage PA Features 40% Efficiency

80Vds to 100Vds GaN FETs Gain AEC-Q101 Qualification

80Vds to 100Vds GaN FETs Gain AEC-Q101 Qualification

Hermetic 1200V SiC Power FETs

Hermetic 1200V SiC Power FETs

Wolfspeed Introduces Next-Gen SiC Diode for Renewable Energy Electric Vehicle Applications

Wolfspeed Introduces Next-Gen SiC Diode for Renewable Energy Electric Vehicle Applications

Wolfspeed, A Cree Company, has introduced the 5th generation (C5D) 1700V SiC Schottky diode that features essentially no switching losses and the…


new products Jan 15, 2019 by Wolfspeed
Cree and STMicroelectronics Announce MultiYear Silicon Carbide Wafer Supply Agreement

Cree and STMicroelectronics Announce MultiYear Silicon Carbide Wafer Supply Agreement

Cree, Inc. recently announced that it signed a multi-year agreement to produce and supply its Wolfspeed® silicon carbide (SiC) wafers to…


new products Jan 09, 2019 by Cree
IGSS GaN and SilTerra Demonstrate Powerful New Technology to  Unlock US12 Billion Semiconductor Opportunity

IGSS GaN and SilTerra Demonstrate Powerful New Technology to Unlock US12 Billion Semiconductor Opportunity

IGSS GaN (IGaN) and SilTerra Malaysia Sdn. Bhd. are pleased to announce the impressive results of their recent technology transfer partnership,…


new products Jan 09, 2019 by IGSS GaN
GaN-Based Conduction Cooled AC-DCs Pack 504W in 4” x 2.4” Footprint

GaN-Based Conduction Cooled AC-DCs Pack 504W in 4” x 2.4” Footprint

Osram and GaN Systems Introduce Ultrafast Laser Driver with High-Power Multi-Channel for LiDAR

Osram and GaN Systems Introduce Ultrafast Laser Driver with High-Power Multi-Channel for LiDAR

Osram Opto Semiconductors announced an ultrafast laser driver with a high-power, multi-channel Surface Mount (SMT) laser for LiDAR (light detection…


Next-Generation SiC Transistors Claim World’s Lowest On-State Resistance

Next-Generation SiC Transistors Claim World’s Lowest On-State Resistance

GaN FETs Enable Military-Grade High-Frequency Power Supply

GaN FETs Enable Military-Grade High-Frequency Power Supply

GaN Systems Onboard in an Abundance of Innovative Products at CES 2019

GaN Systems Onboard in an Abundance of Innovative Products at CES 2019

GaN Systems invites visitors at the Consumer Electronics Show (CES) to see the latest GaN powered breakthroughs.


new products Dec 17, 2018 by GaN Systems
GaN Enables Small & Fast USB Wall-Mount Chargers

GaN Enables Small & Fast USB Wall-Mount Chargers

28GHz GaN Front-End Module Targets 5G Rollout

28GHz GaN Front-End Module Targets 5G Rollout

GaN Enables 14mm-Thin 45W Wall Charger

GaN Enables 14mm-Thin 45W Wall Charger

UnitedSiC Introduces Kelvin Connection Parts into UF3C FAST FET Series

UnitedSiC Introduces Kelvin Connection Parts into UF3C FAST FET Series

UnitedSiC expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs


Hermetic, High-Voltage Cascode GaN Power FETs

Hermetic, High-Voltage Cascode GaN Power FETs

1700V SiC Power Module Claims High Reliability in Extreme Environments

1700V SiC Power Module Claims High Reliability in Extreme Environments

High Power GaN Solutions for Server and Automotive Applications

High Power GaN Solutions for Server and Automotive Applications

Gen 3 600V & 1200V “FAST” Silicon Carbide FET series

Gen 3 600V & 1200V “FAST” Silicon Carbide FET series