New Industry Products

80Vds to 100Vds GaN FETs Gain AEC-Q101 Qualification

January 18, 2019 by Scott McMahan

Efficient Power Conversion Corporation (EPC) reported the successful completion of AEC-Q101 qualification of two additional eGaN® devices, for a variety of applications in the automotive industry and other harsh environments. The new products, EPC2206, and EPC2212 are both discrete transistors in wafer-level, chip-scale packaging (WLCS) with 80Vds and 100Vds ratings respectively.

The EPC2206 is an 80V, 2.2mΩ enhancement-mode FET with a pulsed current rating of 390A in a chip-scale package measuring 6.1mm x 2.3mm. The EPC2212 is a 100V, 13.5 mΩ component with a pulsed current rating of 75A and comes in a 2.1mm x 1.6mm chip-scale package. The company says that these eGaN FETs are many times smaller and achieve switching speeds of between 10 and 100 times faster than their silicon MOSFET counterparts.

The EPC2206 is perfect for vehicles utilizing 48V bus power distribution to manage the power-intensive, electronically-driven functions and features in the latest cars. Electric start-stop, electric steering, electronic suspension, and variable speed air conditioning are among the examples.

And now, with the rise of self-driving vehicles, additional demands from automotive electronic systems such as lidar, radar, cameras, and ultrasonic sensors are placed upon the power distribution system, thereby accelerating the need for autos to transistion to a 48V bus system. The company says that for 48V bus systems, GaN devices like the EPC2206 increase efficiency, shrink size and weight and reduce system cost.

EPC2206 eGaN® FET

The EPC2212 is suited for powering the lasers in lidar systems because the FET can be triggered to create high-current with extremely short pulse widths. The short pulse width enables higher resolution, and the higher pulse current allows the lidar system to perceive objects at greater distances.

EPC says that these two characteristics, along with their tiny size and low cost, make eGaN FETs perfect for ultrasonic sensors and radar in addition to lidar in demanding automotive applications.

EPC2212 eGaN® FET

EPC's CEO and co-founder Alex Lidow notes, "These two automotive products are the next in what will be a constant stream of transistors and integrated circuits designed to enable autonomous driving and improve fuel economy and safety. Our eGaN technology is faster, smaller, more efficient, lower cost, and more reliable than the aging silicon power MOSFET used in today's vehicles."


  • VDS, 80V
  • Max Rds(on), 2.2mΩ
  • Id, 90A
Pulsed Id, 390A
  • AEC-Q101 Qualified
  • Die Size: 6.05 mm x 2.3 mm


  • 48 V Power Distribution Systems
  • Open Rack Server Architectures
  • High-Fidelity Infotainment
  • High-Intensity Headlamps
  • Isolated Power Supplies
  • Low Inductance Motor Drive


  • Vds, 100V
  • Max RDS(on),13.5mΩ
  • Id, 18A Pulsed Id, 75A
  • AEC-Q101 Qualified
  • Die Size: 2.1 mm x 1.6 mm


  • LiDAR/Pulsed Power Applications
  • 48 V Power Distribution Systems
  • High-Fidelity Infotainment
  • High-Intensity Headlamps

Price and Availability

The EPC2206 eGaN FET is priced for 500 units at $3.65 each, while the EPC2212 is priced for 1K units at $1.37 each. Both products are available for immediate delivery from Digi-Key.