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UC San Diego Researchers Reveal Findings on the Enhancement of Lithium-Metal Battery Technology

UC San Diego Researchers Reveal Findings on the Enhancement of Lithium-Metal Battery Technology

Researchers find that the application of higher pressure causes lithium particles to deposit in a more orderly fashion in lithium-metal batteries…


News Oct 28, 2021 by Stephanie Leonida
EPC Debuts a Bidirectional, 50W eGaN FET-based Buck-Boost Converter

EPC Debuts a Bidirectional, 50W eGaN FET-based Buck-Boost Converter

The new demonstration board operates either as a 12V to 60V boost converter or as a 48V to 12V buck converter.


TRACO POWER Introduces the TEP 100UIR Family of 100W DC-DC Converters

TRACO POWER Introduces the TEP 100UIR Family of 100W DC-DC Converters

TRACO POWER's 100 Watt Railway / Industrial DC-DC Converter with 12:1 Input Range. EN50155 and EN61373 certified with UL/EN/IEC 62368-1 Safety…


GM Invests in EV Battery Facility

GM Invests in EV Battery Facility

General Motors is adding a new battery cell research and development facility to further its electric vehicle expansion.


News Oct 27, 2021 by Shannon Cuthrell
STMicroelectronics (ST) Unveils A New Series of 800V Power MOSFETS

STMicroelectronics (ST) Unveils A New Series of 800V Power MOSFETS

The new super-junction power MOSFETs offer the best available figures of merit for RDS(on) x Area of any 800V device on the market.


EPC’s 40V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC’s 40V eGaN FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…


Ampleon Extends LDMOS Base Station and Multi-Carrier Line with 400W Rugged Doherty RF Power Transistor

Ampleon Extends LDMOS Base Station and Multi-Carrier Line with 400W Rugged Doherty RF Power Transistor

The BLC10G27XS-400AVT offers excellent rugged characteristics, up to a VSWR of 10:1, considered essential for base station applications where…


Basic CMOS Logic Gates

Basic CMOS Logic Gates

Learn about gates built with the CMOS digital-logic family.


40 V eGaN® FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

40 V eGaN® FET Ideal for High Power Density Telecom, Netcom, and Computing Solutions Now Available from EPC

EPC introduces the 40 V, 1.3 milliohm EPC2067 eGaN® FET offering designers a device that is smaller, more efficient, and more reliable than…


Foxconn Unveils Three New Self-Developed Electric Vehicle Models

Foxconn Unveils Three New Self-Developed Electric Vehicle Models

Smart manufacturing giant Foxconn (also known as Hon Hai) has unveiled three new self-developed electric vehicle (EV) models: the Model C…


Vincotech’s New On-Line Simulator Launches from a Webpage

Vincotech’s New On-Line Simulator Launches from a Webpage

With no download necessary, the new simulation tool requires no third-party software and works with any operating system.


CSM HV Breakout Modules with PowerLok Connector System for Easy Handling on Test Benches

CSM HV Breakout Modules with PowerLok Connector System for Easy Handling on Test Benches

The new HV Breakout Module 1.2C is easily connected to the HV power cables via a PL500 connector system and allows single-phase measurements on…


Allegro Unveils 3-Phase Gate Driver For EV and Hybrid Cars

Allegro Unveils 3-Phase Gate Driver For EV and Hybrid Cars

Allegro MicroSystems's A89307 offers ultra-low noise and vibration by using a Field Oriented Control (FOC) algorithm to drive continuous…


Dynamic ON-Resistance Measurement Techniques for GaN Power Transistors

Dynamic ON-Resistance Measurement Techniques for GaN Power Transistors

Dynamic on-state resistance is critical for the reliable and stable operation of GaN power transistors. However, many engineers are struggling to…


NIST Researchers Develop a New Method to Detect Faulty Transistors on Chips

NIST Researchers Develop a New Method to Detect Faulty Transistors on Chips

NIST Researchers and collaborators developed a new technique to determine faulty semiconductor devices and that can also count the number of…


News Oct 25, 2021 by Darshil Patel
ABB Announces its Latest EV Charging Technology is the Fastest in the World

ABB Announces its Latest EV Charging Technology is the Fastest in the World

ABB’s latest EV charger has claims to take the throne for the world’s fastest charger, the Terra 360.


Understanding the Importance of Power Electronics in Electrified Transportation

Understanding the Importance of Power Electronics in Electrified Transportation

Learn about the different types of electrified vehicles and how power electronics play an essential role in their proliferation.


Infineon Enables Highly Integrated USB Type-C Charger Unification

Infineon Enables Highly Integrated USB Type-C Charger Unification

The EZ-PD™ BCR (Barrel Connector Replacement) is a highly integrated USB-C controller, together with the USB-C connector, it replaces barrel…


STMicroelectronics’ Debuts Isolated Gate Driver Aimed at SiC MOSFETS

STMicroelectronics’ Debuts Isolated Gate Driver Aimed at SiC MOSFETS

The new unit is a galvanically isolated gate driver that can sink and source up to 4 amps at voltages up to 26V.


Stackpole’s High Current Jumper Offers 2X Current Handling Capacity

Stackpole’s High Current Jumper Offers 2X Current Handling Capacity

Stackpole’s HCJ series offers more than double the current rating of comparable high current jumpers.