Latest Wide Bandgap Articles

II-VI Incorporated welcomes a new team member, settles business deals, and joins the Semiconductor Industry Association. 

II-VI Incorporated welcomes a new team member, settles business deals, and joins the Semiconductor Industry Association. 

This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including…

This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including AEC-Q101 qualification and…

This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC…

This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC modules utilizing this…

Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.

Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.

This article describes an ultra-low parasitics Eon/Eoff measurement platform and the advantages of 100V GaN in 48V applications.

This article describes an ultra-low parasitics Eon/Eoff measurement platform and the advantages of 100V GaN in 48V applications.

The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W

The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W

This article focuses on the stressor of current. Parts were tested to failure under two specific conditions that…

This article focuses on the stressor of current. Parts were tested to failure under two specific conditions that demonstrate the exceptional…

United SiC enter into two distribution agreements, one with EDOM Technology, and another with Macnica to expand its…

United SiC enter into two distribution agreements, one with EDOM Technology, and another with Macnica to expand its business across asian markets.

The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace

The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace

Dutch-American semiconductor giant NXP opened a new RF GaN wafer fab in Arizona this week.

Dutch-American semiconductor giant NXP opened a new RF GaN wafer fab in Arizona this week.

EPC Space features a family of Rad Hard enhancement mode GaN drivers and power stages.

EPC Space features a family of Rad Hard enhancement mode GaN drivers and power stages.

STMicroelectronics unveiled MasterGaN®, the world-first platform embedding a half-bridge driver based on silicon…

STMicroelectronics unveiled MasterGaN®, the world-first platform embedding a half-bridge driver based on silicon technology along with a pair of…

The main reasons for paralleling modules are technical and these reasons become more important with SiC MOSFETs for…

The main reasons for paralleling modules are technical and these reasons become more important with SiC MOSFETs for several reasons.

Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds…

Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds and power handling…

These enable dimmable 90 W LED ballasts in an isolated flyback topology following a boost Power Factor Correction (PFC) stage.

These enable dimmable 90 W LED ballasts in an isolated flyback topology following a boost Power Factor Correction (PFC) stage.

Mitsubishi Electric features its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a…

Mitsubishi Electric features its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a newly developed SiC chip…

Mitsubishi Electric announces the addition of the new N-series SiCMOSFETs in a TO-247 package (under development) to the…

Mitsubishi Electric announces the addition of the new N-series SiCMOSFETs in a TO-247 package (under development) to the product portfolio in the…

he product enables power modules to be designed and manufactured more reliably, efficiently, and cost-effectively.

he product enables power modules to be designed and manufactured more reliably, efficiently, and cost-effectively.

Microchip’s AgileSwitch® digital programmable gate driver and SP6LI SiC power module kit solution enables developers…

Microchip’s AgileSwitch® digital programmable gate driver and SP6LI SiC power module kit solution enables developers to proceed quickly from…