The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration…
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
This article provides an example of the benefits of integrated GaN power ICs via the introduction of an integrated FET…
This article provides an example of the benefits of integrated GaN power ICs via the introduction of an integrated FET and gate driver IC.
German semiconductor manufacturer, Infineon, signed an agreement with GT Advanced Technologies (GTAT) last week for the…
German semiconductor manufacturer, Infineon, signed an agreement with GT Advanced Technologies (GTAT) last week for the supply of silicon carbide…
The partnership between Microchip and Efficient Power Conversion (EPC) has yielded two 250W, 48V DC-DC solutions for…
The partnership between Microchip and Efficient Power Conversion (EPC) has yielded two 250W, 48V DC-DC solutions for ultra-thin laptops, displays,…
Researchers from the University of Surrey developed a unique transistor that could provide greater design freedom and…
Researchers from the University of Surrey developed a unique transistor that could provide greater design freedom and simplified circuitry for…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active power management, and…
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.
GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for…
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for fast switching, wide…
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
This article details how the ascent of GaN is redefining power conversion.
This article details how the ascent of GaN is redefining power conversion.
II-VI Incorporated welcomes a new team member, settles business deals, and joins the Semiconductor Industry Association.
II-VI Incorporated welcomes a new team member, settles business deals, and joins the Semiconductor Industry Association.
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including…
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including AEC-Q101 qualification and…
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC…
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC modules utilizing this…
Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.
Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.
This article describes an ultra-low parasitics Eon/Eoff measurement platform and the advantages of 100V GaN in 48V applications.
This article describes an ultra-low parasitics Eon/Eoff measurement platform and the advantages of 100V GaN in 48V applications.
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