STMicroelectronics unveiled MasterGaN®, the world-first platform embedding a half-bridge driver based on silicon technology along with a pair of…
STMicroelectronics unveiled MasterGaN®, the world-first platform embedding a half-bridge driver based on silicon technology along with a pair of…
The main reasons for paralleling modules are technical and these reasons become more important with SiC MOSFETs for…
The main reasons for paralleling modules are technical and these reasons become more important with SiC MOSFETs for several reasons.
Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds…
Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds and power handling…
These enable dimmable 90 W LED ballasts in an isolated flyback topology following a boost Power Factor Correction (PFC) stage.
These enable dimmable 90 W LED ballasts in an isolated flyback topology following a boost Power Factor Correction (PFC) stage.
Mitsubishi Electric features its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a…
Mitsubishi Electric features its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a newly developed SiC chip…
Mitsubishi Electric announces the addition of the new N-series SiCMOSFETs in a TO-247 package (under development) to the…
Mitsubishi Electric announces the addition of the new N-series SiCMOSFETs in a TO-247 package (under development) to the product portfolio in the…
he product enables power modules to be designed and manufactured more reliably, efficiently, and cost-effectively.
he product enables power modules to be designed and manufactured more reliably, efficiently, and cost-effectively.
Microchip’s AgileSwitch® digital programmable gate driver and SP6LI SiC power module kit solution enables developers…
Microchip’s AgileSwitch® digital programmable gate driver and SP6LI SiC power module kit solution enables developers to proceed quickly from…
Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have incorporated their patented…
Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have incorporated their patented Gallium-Nitride (GaN) power ICs, DC-DC…
II-VI Incorporated will expand its silicon carbide capabilities by leveraging expertise from Ascatron and INNOViON in…
II-VI Incorporated will expand its silicon carbide capabilities by leveraging expertise from Ascatron and INNOViON in upcoming acquisitions later…
Delphi Technologies initiates market expansion of electric vehicle technologies through winning new business with Chinese…
Delphi Technologies initiates market expansion of electric vehicle technologies through winning new business with Chinese Original Equipment…
AEC-Q101 approved devices with 120V, 150V, and 200V combine best attributes of Schottky and fast recovery diodes
AEC-Q101 approved devices with 120V, 150V, and 200V combine best attributes of Schottky and fast recovery diodes
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported…
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported a typical ON-resistance of…
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
In this third article of the series, we will look at SiC power transistors.
In this third article of the series, we will look at SiC power transistors.
This article highlights the latest results in the area of low pressure/ no pressure silver sintering on using solvent…
This article highlights the latest results in the area of low pressure/ no pressure silver sintering on using solvent free silver sintering pastes.
GaN Systems announced a new reference design for a high power density 65W QR (quasi-resonant) charger.
GaN Systems announced a new reference design for a high power density 65W QR (quasi-resonant) charger.
Lenovo and Navitas come together in another partnership, but this time GaN-powered fast charging is the name of the game.
Lenovo and Navitas come together in another partnership, but this time GaN-powered fast charging is the name of the game.
Efficient Power Conversion (EPC) and Microchip have partnered to develop a 300W, 48-12V DC-DC converter demonstration…
Efficient Power Conversion (EPC) and Microchip have partnered to develop a 300W, 48-12V DC-DC converter demonstration board that was designed for…
This article highlights the drawbacks, advantages, and features of silicon carbide current-limiting devices.
This article highlights the drawbacks, advantages, and features of silicon carbide current-limiting devices.
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