Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have incorporated their patented Gallium-Nitride (GaN) power ICs, DC-DC…
Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have incorporated their patented Gallium-Nitride (GaN) power ICs, DC-DC…
II-VI Incorporated will expand its silicon carbide capabilities by leveraging expertise from Ascatron and INNOViON in…
II-VI Incorporated will expand its silicon carbide capabilities by leveraging expertise from Ascatron and INNOViON in upcoming acquisitions later…
Delphi Technologies initiates market expansion of electric vehicle technologies through winning new business with Chinese…
Delphi Technologies initiates market expansion of electric vehicle technologies through winning new business with Chinese Original Equipment…
AEC-Q101 approved devices with 120V, 150V, and 200V combine best attributes of Schottky and fast recovery diodes
AEC-Q101 approved devices with 120V, 150V, and 200V combine best attributes of Schottky and fast recovery diodes
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported…
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported a typical ON-resistance of…
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
In this third article of the series, we will look at SiC power transistors.
In this third article of the series, we will look at SiC power transistors.
This article highlights the latest results in the area of low pressure/ no pressure silver sintering on using solvent…
This article highlights the latest results in the area of low pressure/ no pressure silver sintering on using solvent free silver sintering pastes.
GaN Systems announced a new reference design for a high power density 65W QR (quasi-resonant) charger.
GaN Systems announced a new reference design for a high power density 65W QR (quasi-resonant) charger.
Lenovo and Navitas come together in another partnership, but this time GaN-powered fast charging is the name of the game.
Lenovo and Navitas come together in another partnership, but this time GaN-powered fast charging is the name of the game.
Efficient Power Conversion (EPC) and Microchip have partnered to develop a 300W, 48-12V DC-DC converter demonstration…
Efficient Power Conversion (EPC) and Microchip have partnered to develop a 300W, 48-12V DC-DC converter demonstration board that was designed for…
This article highlights the drawbacks, advantages, and features of silicon carbide current-limiting devices.
This article highlights the drawbacks, advantages, and features of silicon carbide current-limiting devices.
ROHM and LEADRIVE unite to develop next-generation SiC solutions for the electrical vehicle market and to promote…
ROHM and LEADRIVE unite to develop next-generation SiC solutions for the electrical vehicle market and to promote world-wide market adoption of SiC…
This article highlights GaN Systems their strategic partnership with BrightLoop to develop the latest AC/DC and DC/DC…
This article highlights GaN Systems their strategic partnership with BrightLoop to develop the latest AC/DC and DC/DC Converter products for…
This article highlights ON Semiconductor NXH40B120MNQ family of full SiC power modules integrate a 1200 V, 40mΩ SiC…
This article highlights ON Semiconductor NXH40B120MNQ family of full SiC power modules integrate a 1200 V, 40mΩ SiC MOSFET and 1200 V, 40 A SiC…
VisIC Technologies and ZF Friedrichshafen AG partner to utilize innovative gallium nitride technology in the development…
VisIC Technologies and ZF Friedrichshafen AG partner to utilize innovative gallium nitride technology in the development of electric vehicle…
CUI Inc announces the addition of two GaN desktop ac-dc power supply series to its SDI product family designed for a…
CUI Inc announces the addition of two GaN desktop ac-dc power supply series to its SDI product family designed for a wide range of portable…
Mitsubishi Electric has launched a power module in its DIPIPM™ family which incorporates MOSFETs based on SiC material.
Mitsubishi Electric has launched a power module in its DIPIPM™ family which incorporates MOSFETs based on SiC material.
CEA-Leti Researchers Break a world record in LiFi communications using GaN technology.
CEA-Leti Researchers Break a world record in LiFi communications using GaN technology.
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