The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W
The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W
This article focuses on the stressor of current. Parts were tested to failure under two specific conditions that…
This article focuses on the stressor of current. Parts were tested to failure under two specific conditions that demonstrate the exceptional…
United SiC enter into two distribution agreements, one with EDOM Technology, and another with Macnica to expand its…
United SiC enter into two distribution agreements, one with EDOM Technology, and another with Macnica to expand its business across asian markets.
The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace
The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace
Dutch-American semiconductor giant NXP opened a new RF GaN wafer fab in Arizona this week.
Dutch-American semiconductor giant NXP opened a new RF GaN wafer fab in Arizona this week.
EPC Space features a family of Rad Hard enhancement mode GaN drivers and power stages.
EPC Space features a family of Rad Hard enhancement mode GaN drivers and power stages.
STMicroelectronics unveiled MasterGaN®, the world-first platform embedding a half-bridge driver based on silicon…
STMicroelectronics unveiled MasterGaN®, the world-first platform embedding a half-bridge driver based on silicon technology along with a pair of…
The main reasons for paralleling modules are technical and these reasons become more important with SiC MOSFETs for…
The main reasons for paralleling modules are technical and these reasons become more important with SiC MOSFETs for several reasons.
Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds…
Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds and power handling…
These enable dimmable 90 W LED ballasts in an isolated flyback topology following a boost Power Factor Correction (PFC) stage.
These enable dimmable 90 W LED ballasts in an isolated flyback topology following a boost Power Factor Correction (PFC) stage.
Mitsubishi Electric features its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a…
Mitsubishi Electric features its coming launch of second-generation full-SiC (silicon carbide) power modules featuring a newly developed SiC chip…
Mitsubishi Electric announces the addition of the new N-series SiCMOSFETs in a TO-247 package (under development) to the…
Mitsubishi Electric announces the addition of the new N-series SiCMOSFETs in a TO-247 package (under development) to the product portfolio in the…
he product enables power modules to be designed and manufactured more reliably, efficiently, and cost-effectively.
he product enables power modules to be designed and manufactured more reliably, efficiently, and cost-effectively.
Microchip’s AgileSwitch® digital programmable gate driver and SP6LI SiC power module kit solution enables developers…
Microchip’s AgileSwitch® digital programmable gate driver and SP6LI SiC power module kit solution enables developers to proceed quickly from…
Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have incorporated their patented…
Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have incorporated their patented Gallium-Nitride (GaN) power ICs, DC-DC…
II-VI Incorporated will expand its silicon carbide capabilities by leveraging expertise from Ascatron and INNOViON in…
II-VI Incorporated will expand its silicon carbide capabilities by leveraging expertise from Ascatron and INNOViON in upcoming acquisitions later…
Delphi Technologies initiates market expansion of electric vehicle technologies through winning new business with Chinese…
Delphi Technologies initiates market expansion of electric vehicle technologies through winning new business with Chinese Original Equipment…
AEC-Q101 approved devices with 120V, 150V, and 200V combine best attributes of Schottky and fast recovery diodes
AEC-Q101 approved devices with 120V, 150V, and 200V combine best attributes of Schottky and fast recovery diodes
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported…
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported a typical ON-resistance of…
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
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