Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
Their goals are to improve efficiencies in the design and testing validation of GaN and SiC semiconductors.
The isolated, 1.5W DC/DC device employs a tiny internal planar transformer to cut power solution sizes in half for EVS and HEVs.
The isolated, 1.5W DC/DC device employs a tiny internal planar transformer to cut power solution sizes in half for EVS and HEVs.
The new unit features multiple levels of control, affording a high level of protection for SiC MOSFETs and the systems they power.
The new unit features multiple levels of control, affording a high level of protection for SiC MOSFETs and the systems they power.
ADL8150 features low phase noise of -172 dBc/Hz at 10 kHz offset, 12 dB signal gain, and +30dBm OIP3.
ADL8150 features low phase noise of -172 dBc/Hz at 10 kHz offset, 12 dB signal gain, and +30dBm OIP3.
GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining…
GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining ring-free output switching…
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple…
The SD11900 series maximizes power density while minimizing loop inductance with a pin configuration to allow simple power bussing.
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
The new enhancement mode power transistor features a maximum ID of 80 amps with a die size of only 3.25 x 3.25mm.
The adoption of USBPD 3.0 and Type-C connectors is expected to standardize power adaptors across previously segmented…
The adoption of USBPD 3.0 and Type-C connectors is expected to standardize power adaptors across previously segmented electronic markets. Gone are…
The new design is fully customizable and will reduce time to market for a variety of high-power applications.
The new design is fully customizable and will reduce time to market for a variety of high-power applications.
PSU exceeds 80+ Titanium efficiency requirements and presents the highest power density solution at a lower cost than…
PSU exceeds 80+ Titanium efficiency requirements and presents the highest power density solution at a lower cost than traditional silicon solutions.
Junction temperature is directly related to system reliability. With TO packaged transistors, it was possible to add a…
Junction temperature is directly related to system reliability. With TO packaged transistors, it was possible to add a thermocouple to the case and…
The collaboration will see GaN Systems supply BMW Group with high-performance, automotive-grade GaN power transistors.
The collaboration will see GaN Systems supply BMW Group with high-performance, automotive-grade GaN power transistors.
ViSIC Technologies received $35 million in funding to expand its GaN-based product range for automotive applications.
ViSIC Technologies received $35 million in funding to expand its GaN-based product range for automotive applications.
New technology enables electric buses and other e-transportation power systems to meet and exceed stringent environmental…
New technology enables electric buses and other e-transportation power systems to meet and exceed stringent environmental conditions while…
Nexperia announces the commencement of its virtual, power electronics-focused Power Live conference.
Nexperia announces the commencement of its virtual, power electronics-focused Power Live conference.
California semiconductor manufacturer Transphorm closed its acquisition of the high-volume AFSW wafer fab in Japan.
California semiconductor manufacturer Transphorm closed its acquisition of the high-volume AFSW wafer fab in Japan.
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.
The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.
The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.
Onsemi is acquiring SiC materials provider GT Advanced Technologies to meet increased demand in the EV and infrastructure markets.
Onsemi is acquiring SiC materials provider GT Advanced Technologies to meet increased demand in the EV and infrastructure markets.
The Fraunhofer Institute of Silicon Technology (ISIT) in Germany has recently announced a new research project for…
The Fraunhofer Institute of Silicon Technology (ISIT) in Germany has recently announced a new research project for designing and implementing…
Facebook
Google
GitHub
Linkedin