Latest Wide Bandgap Articles

California semiconductor manufacturer Transphorm closed its acquisition of the high-volume AFSW wafer fab in Japan.

California semiconductor manufacturer Transphorm closed its acquisition of the high-volume AFSW wafer fab in Japan.

The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.

The device features a short-circuit withstand time rating of 5μs and is introduced as part of a series of 9 new devices.

The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.

The two companies agree to joint development of the next generation of their successful Gallium Nitride (GaN) technology.

Onsemi is acquiring SiC materials provider GT Advanced Technologies to meet increased demand in the EV and infrastructure markets.

Onsemi is acquiring SiC materials provider GT Advanced Technologies to meet increased demand in the EV and infrastructure markets.

The Fraunhofer Institute of Silicon Technology (ISIT) in Germany has recently announced a new research project for…

The Fraunhofer Institute of Silicon Technology (ISIT) in Germany has recently announced a new research project for designing and implementing…

Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.

Both devices include both the gate driver and two enhancement-mode GaN power transistors in a single highly integrated package.

This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the…

This circuit uses a synchronous MOSFET that lets the bootstrap voltage reach the logic supply voltage, VCC, allowing the driver to operate from a…

Gallium nitride (GaN) is the key enabler for high-frequency, and simultaneously high-efficiency topologies.

Gallium nitride (GaN) is the key enabler for high-frequency, and simultaneously high-efficiency topologies.

Cree and STMicroelectronics are expanding their supply agreement to manage higher production volumes.

Cree and STMicroelectronics are expanding their supply agreement to manage higher production volumes.

For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium…

For a fifth time, Lenovo and Navitas have partnered up to create a new fast-charging device, the YOGA CC130, a gallium nitride (GaN) based power…

The new test systems offer power options of up to 270 KW, with capabilities of up to 1.5 MW upon parallelization.

The new test systems offer power options of up to 270 KW, with capabilities of up to 1.5 MW upon parallelization.

EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than…

EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than traditional silicon Rad…

A series of AC/DC and DC/AC baseless power converters were developed in cooperation with Europe’s Clean Sky Consortium.

A series of AC/DC and DC/AC baseless power converters were developed in cooperation with Europe’s Clean Sky Consortium.

ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology.

ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology.

The new devices allow designers to reap the benefits of Gallium Nitride (GaN) technology at a reduced cost per watt.

The new devices allow designers to reap the benefits of Gallium Nitride (GaN) technology at a reduced cost per watt.

Changing its name to onsemi, Arizona-based power giant ON Semiconductor announced plans to expand its reach in the…

Changing its name to onsemi, Arizona-based power giant ON Semiconductor announced plans to expand its reach in the industrial and automotive…

The new evaluation board employs onsemi's NCP1680 controller and GaN Systems’ GS66508B 650V Enhancement Mode GaN…

The new evaluation board employs onsemi's NCP1680 controller and GaN Systems’ GS66508B 650V Enhancement Mode GaN Transistor.

Hon Hai Technology Group, also known as Foxconn, has signed a six-inch wafer fab transaction with non-volatile memory…

Hon Hai Technology Group, also known as Foxconn, has signed a six-inch wafer fab transaction with non-volatile memory (NVM) manufacturer Macronix.

The new silicon carbide (SiC) diodes feature higher speed and greater efficiency than last generation silicon diodes.

The new silicon carbide (SiC) diodes feature higher speed and greater efficiency than last generation silicon diodes.