EEPower

Latest Wide Bandgap Articles

Categories

STMicroelectronics Begins Producing 200mm Silicon Carbide Wafers

STMicroelectronics Begins Producing 200mm Silicon Carbide Wafers

The effort marks ST’s commitment to the high power, high voltage requirements of the automotive and industrial markets.


GaN Systems and onsemi Partner on Bridgeless Totem Pole PFC Evaluation Board

GaN Systems and onsemi Partner on Bridgeless Totem Pole PFC Evaluation Board

Companies Introduce World’s First Bridgeless Totem Pole PFC Evaluation Board.


Rad Hard Gallium Nitride (GaN) Power Devices from EPC Space Selected by Astranis for Geostationary Satellites

Rad Hard Gallium Nitride (GaN) Power Devices from EPC Space Selected by Astranis for Geostationary Satellites

EPC Space is providing Rad Hard GaN power devices to Astranis for use in the latest build of new small geostationary communications satellites.


UnitedSiC Launches FET-Jet Calculator v2

UnitedSiC Launches FET-Jet Calculator v2

Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.


GaN Systems and FTEX Team Up to Deliver EV Motor Drives

GaN Systems and FTEX Team Up to Deliver EV Motor Drives

GaN Systems is teaming up with precision motor control startup FTEX to deliver GaN-based motor drives for e-scooters, e-bikes, and e-mopeds.


News Aug 08, 2021 by Shannon Cuthrell
Orchard Audio Launches a 500W Stereo GaN Streaming Hi-Fi Audio Amplifier

Orchard Audio Launches a 500W Stereo GaN Streaming Hi-Fi Audio Amplifier

The Starkrimson Streamer Ultra represents a new kind of high-end audio system that offers commanding performance in a discreet package. It can…


Intelligent Power Amplifier Module Based on GaN FETs

Intelligent Power Amplifier Module Based on GaN FETs

Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very…


ROHM Debuts Three IGBTs with Built-In SiC Schottky Barrier Diodes (SBD)

ROHM Debuts Three IGBTs with Built-In SiC Schottky Barrier Diodes (SBD)

The new devices utilize ROHM’s Schottky SBDs as a freewheeling diode to effect minimal switching power losses


EPC Space Announces Cost Effective New 60V Rad Hard GaN Power Device for Demanding Space Applications

EPC Space Announces Cost Effective New 60V Rad Hard GaN Power Device for Demanding Space Applications

EPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical…


Microchip Expands SiC Portfolio with 1700V Solutions

Microchip Expands SiC Portfolio with 1700V Solutions

Today’s energy-efficient electric charging systems powering commercial vehicle propulsion, as well as auxiliary power systems, solar inverters,…


Fraunhofer IAF Establishes a GaN Low Voltage IC Design for 3-Phase Motor Inverters

Fraunhofer IAF Establishes a GaN Low Voltage IC Design for 3-Phase Motor Inverters

The Fraunhofer Institute for Applied Solid State Physics (IAF), explored new research through their latest ideas for integrating GaN-based ICs for…


Tagore Introduces 650V GaN Power IC, Comprising GaN Power FET with Monolithically Integrated Driver

Tagore Introduces 650V GaN Power IC, Comprising GaN Power FET with Monolithically Integrated Driver

Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm…


The Role of GaAs Diodes in High Performance Power Conversion

The Role of GaAs Diodes in High Performance Power Conversion

This article highlights 3-5 Power Electronics Silicon feature dynamic switching characteristics similar to Silicon Carbide (SiC) to give excellent…


NXP’s GaN 5G Multi-Chip Modules Hold Promise for Energy-Efficient Mobile Networks Applications

NXP’s GaN 5G Multi-Chip Modules Hold Promise for Energy-Efficient Mobile Networks Applications

NXP Semiconductors has integrated Gallium Nitride (GaN) technology into its 5G multi-chip module platform.


Understanding the Differences Between the N-channel and P-channel Field-effect Transistors (FETs)

Understanding the Differences Between the N-channel and P-channel Field-effect Transistors (FETs)

Learn about the principles of and the operation of the field-effect transistor.


Microchip Debuts a GaN-based Ka-band MMIC for SatCom Terminals

Microchip Debuts a GaN-based Ka-band MMIC for SatCom Terminals

The new monolithic microwave integrated Circuit (MMIC) delivers 10W of saturated RF output power over a 27.5 to 31GHz range


Dissecting the GaN ePower Stage IC-Based Inverter for Battery-Powered Motor Drive Applications

Dissecting the GaN ePower Stage IC-Based Inverter for Battery-Powered Motor Drive Applications

This article highlights EPC discrete eGaN FETs and Integrated Circuit ePower™ stages.


ROHM Debuts a DC/DC Converter IC with a Built-In 1700-Volt SiC MOSFET

ROHM Debuts a DC/DC Converter IC with a Built-In 1700-Volt SiC MOSFET

The surface mounted units are housed in TO 263-7L package and deliver up to 48 watts with no heatsink required


Cree and Gospower Partner to Give Silicon Carbide a Boost

Cree and Gospower Partner to Give Silicon Carbide a Boost

Cree announces its partnership with Gospower which focuses on the development of silicon-carbide-based power supply solutions for boosting…


SmartDriver Provides Highest Flexibility for Power Stages in Variable Speed Drives

SmartDriver Provides Highest Flexibility for Power Stages in Variable Speed Drives

The continuing trend towards more efficient energy consumption in motor drives has led to a wide offering of devices for the power stage of…