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Rad Hard GaN Power Devices from EPC Space Offer Improved Performance, Shorter Lead-times

Rad Hard GaN Power Devices from EPC Space Offer Improved Performance, Shorter Lead-times

EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than traditional silicon Rad…


Microchip’s New Power Modules Meet Tough New Aerospace Standards

Microchip’s New Power Modules Meet Tough New Aerospace Standards

A series of AC/DC and DC/AC baseless power converters were developed in cooperation with Europe’s Clean Sky Consortium.


STMicroelectronics Introduces New 45W and 150W MasterGaN Devices for High-Efficiency Power Conversion

STMicroelectronics Introduces New 45W and 150W MasterGaN Devices for High-Efficiency Power Conversion

ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology.


GaN Systems Debuts Two Low-cost E-Mode GaN Power Transistors

GaN Systems Debuts Two Low-cost E-Mode GaN Power Transistors

The new devices allow designers to reap the benefits of Gallium Nitride (GaN) technology at a reduced cost per watt.


ON Semiconductor Rebrands and Sets Sights on New Sustainability Efforts

ON Semiconductor Rebrands and Sets Sights on New Sustainability Efforts

Changing its name to onsemi, Arizona-based power giant ON Semiconductor announced plans to expand its reach in the industrial and automotive…


News Aug 17, 2021 by Shannon Cuthrell
GaN Systems and onsemi Debut a Totem Pole PFC Evaluation Board

GaN Systems and onsemi Debut a Totem Pole PFC Evaluation Board

The new evaluation board employs onsemi's NCP1680 controller and GaN Systems’ GS66508B 650V Enhancement Mode GaN Transistor.


Foxconn Purchases Fab to Produce Silicon Carbide Wafer Chips

Foxconn Purchases Fab to Produce Silicon Carbide Wafer Chips

Hon Hai Technology Group, also known as Foxconn, has signed a six-inch wafer fab transaction with non-volatile memory (NVM) manufacturer Macronix.


Littelfuse Introduces a Series of 1700V SiC Schottky Barrier Diodes

Littelfuse Introduces a Series of 1700V SiC Schottky Barrier Diodes

The new silicon carbide (SiC) diodes feature higher speed and greater efficiency than last generation silicon diodes.


STMicroelectronics Begins Producing 200mm Silicon Carbide Wafers

STMicroelectronics Begins Producing 200mm Silicon Carbide Wafers

The effort marks ST’s commitment to the high power, high voltage requirements of the automotive and industrial markets.


GaN Systems and onsemi Partner on Bridgeless Totem Pole PFC Evaluation Board

GaN Systems and onsemi Partner on Bridgeless Totem Pole PFC Evaluation Board

Companies Introduce World’s First Bridgeless Totem Pole PFC Evaluation Board.


Rad Hard Gallium Nitride (GaN) Power Devices from EPC Space Selected by Astranis for Geostationary Satellites

Rad Hard Gallium Nitride (GaN) Power Devices from EPC Space Selected by Astranis for Geostationary Satellites

EPC Space is providing Rad Hard GaN power devices to Astranis for use in the latest build of new small geostationary communications satellites.


UnitedSiC Launches FET-Jet Calculator v2

UnitedSiC Launches FET-Jet Calculator v2

Enhancements to the online power design tool make identifying optimal SiC FET design solutions even easier.


GaN Systems and FTEX Team Up to Deliver EV Motor Drives

GaN Systems and FTEX Team Up to Deliver EV Motor Drives

GaN Systems is teaming up with precision motor control startup FTEX to deliver GaN-based motor drives for e-scooters, e-bikes, and e-mopeds.


News Aug 08, 2021 by Shannon Cuthrell
Orchard Audio Launches a 500W Stereo GaN Streaming Hi-Fi Audio Amplifier

Orchard Audio Launches a 500W Stereo GaN Streaming Hi-Fi Audio Amplifier

The Starkrimson Streamer Ultra represents a new kind of high-end audio system that offers commanding performance in a discreet package. It can…


Intelligent Power Amplifier Module Based on GaN FETs

Intelligent Power Amplifier Module Based on GaN FETs

Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very…


ROHM Debuts Three IGBTs with Built-In SiC Schottky Barrier Diodes (SBD)

ROHM Debuts Three IGBTs with Built-In SiC Schottky Barrier Diodes (SBD)

The new devices utilize ROHM’s Schottky SBDs as a freewheeling diode to effect minimal switching power losses


EPC Space Announces Cost Effective New 60V Rad Hard GaN Power Device for Demanding Space Applications

EPC Space Announces Cost Effective New 60V Rad Hard GaN Power Device for Demanding Space Applications

EPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical…


Microchip Expands SiC Portfolio with 1700V Solutions

Microchip Expands SiC Portfolio with 1700V Solutions

Today’s energy-efficient electric charging systems powering commercial vehicle propulsion, as well as auxiliary power systems, solar inverters,…


Fraunhofer IAF Establishes a GaN Low Voltage IC Design for 3-Phase Motor Inverters

Fraunhofer IAF Establishes a GaN Low Voltage IC Design for 3-Phase Motor Inverters

The Fraunhofer Institute for Applied Solid State Physics (IAF), explored new research through their latest ideas for integrating GaN-based ICs for…


Tagore Introduces 650V GaN Power IC, Comprising GaN Power FET with Monolithically Integrated Driver

Tagore Introduces 650V GaN Power IC, Comprising GaN Power FET with Monolithically Integrated Driver

Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm…