This article highlights Mitsubishi Electric Corporation LV100 T-series IGBT modules for industrial application that will be available for 1200V and…
This article highlights Mitsubishi Electric Corporation LV100 T-series IGBT modules for industrial application that will be available for 1200V and…
Researchers from Los Alamos National Laboratory and their collaborators from the University of California create a…
Researchers from Los Alamos National Laboratory and their collaborators from the University of California create a potential quantum dot solution…
Wettable flanks assure easy optical inspection, improved heat dissipation and better mounting reliability
Wettable flanks assure easy optical inspection, improved heat dissipation and better mounting reliability
This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more…
This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable,…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active power management, and…
The biennial electronica conference is returning this year for an all-digital event held Nov. 9 through Nov. 12.
The biennial electronica conference is returning this year for an all-digital event held Nov. 9 through Nov. 12.
This year’s four-day Electronica trade show will be presented online, featuring over 200 international exhibitors,…
This year’s four-day Electronica trade show will be presented online, featuring over 200 international exhibitors, topical forums, interactive…
The new 1200 and 1700 volt Junction Barrier Schottky (JBS) diodes join the company’s 3rd generation of silicon carbide…
The new 1200 and 1700 volt Junction Barrier Schottky (JBS) diodes join the company’s 3rd generation of silicon carbide MPS diodes.
A look at how GAAFETs could replace FinFETs as the technology of choice to keep down size and provide extremely high…
A look at how GAAFETs could replace FinFETs as the technology of choice to keep down size and provide extremely high density for power devices.
Electronica, one of the World’s leading trade fairs for electronics, will take place next week. Here’s what several…
Electronica, one of the World’s leading trade fairs for electronics, will take place next week. Here’s what several power electronics companies…
Because one size doesn’t fit all, Application Specific FETs (ASFETs) allow designers to more easily focus on the specs…
Because one size doesn’t fit all, Application Specific FETs (ASFETs) allow designers to more easily focus on the specs most relevant to the task…
This article highlights Infineon Technology OptiMOS™ 40 V low-voltage power MOSFET to the market.
This article highlights Infineon Technology OptiMOS™ 40 V low-voltage power MOSFET to the market.
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
Swedish battery manufacturer Northvolt secures $600 million round to expand its battery production and recycling capacity…
Swedish battery manufacturer Northvolt secures $600 million round to expand its battery production and recycling capacity in Europe.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.
GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for…
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for fast switching, wide…
Power electronics company STMicroelectronics is acquiring France-based SOMOS Semiconductor, a power amplifier and RF specialist.
Power electronics company STMicroelectronics is acquiring France-based SOMOS Semiconductor, a power amplifier and RF specialist.
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
This article explores FinFET structure, their uses in a variety of applications, and the advantages and disadvantages…
This article explores FinFET structure, their uses in a variety of applications, and the advantages and disadvantages they have over MOSFETs.
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