New Si823Hx/825xx isolated gate drivers cut latency by 50% and increase transient immunity.
New Si823Hx/825xx isolated gate drivers cut latency by 50% and increase transient immunity.
This article details how the ascent of GaN is redefining power conversion.
This article details how the ascent of GaN is redefining power conversion.
This article highlights EPC's EPC9148 and EPC9153 demonstration boards for 48 V DC-DC conversion.
This article highlights EPC's EPC9148 and EPC9153 demonstration boards for 48 V DC-DC conversion.
II-VI Incorporated welcomes a new team member, settles business deals, and joins the Semiconductor Industry Association.
II-VI Incorporated welcomes a new team member, settles business deals, and joins the Semiconductor Industry Association.
The Modular Electric Vehicle Platform, or MEB, will serve as the basis of entire families of electrified compact Cars,…
The Modular Electric Vehicle Platform, or MEB, will serve as the basis of entire families of electrified compact Cars, SUVs and Vans
Tesla’s new 4680 battery solution offers a tabless electrode to improve thermal management and deliver 6x the amount of…
Tesla’s new 4680 battery solution offers a tabless electrode to improve thermal management and deliver 6x the amount of power while decreasing…
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including…
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including AEC-Q101 qualification and…
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC…
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC modules utilizing this…
The DMT47M2LDVQ can replace two discrete MOSFETs to reduce the board space footprint in many automotive applications,…
The DMT47M2LDVQ can replace two discrete MOSFETs to reduce the board space footprint in many automotive applications, from electric seat control…
Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.
Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.
Maxim Integrated introduces MAX25430 that slashes design size up to 40 percent and eliminates microcontrollers, metal…
Maxim Integrated introduces MAX25430 that slashes design size up to 40 percent and eliminates microcontrollers, metal enclosures and heat sinks for…
In this article, learn how the use of GaN transistors was realized and measured at the PFC stage of a Traco Power power…
In this article, learn how the use of GaN transistors was realized and measured at the PFC stage of a Traco Power power supply unit, as well as…
This article describes an ultra-low parasitics Eon/Eoff measurement platform and the advantages of 100V GaN in 48V applications.
This article describes an ultra-low parasitics Eon/Eoff measurement platform and the advantages of 100V GaN in 48V applications.
Energy storage via an improved redox flow battery solution from researchers at the Friedrich Schiller University has been…
Energy storage via an improved redox flow battery solution from researchers at the Friedrich Schiller University has been introduced to the power…
The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W
The MasterGaN combination will simplify designing chargers and power adapters for applications of up to 400W
This article focuses on the stressor of current. Parts were tested to failure under two specific conditions that…
This article focuses on the stressor of current. Parts were tested to failure under two specific conditions that demonstrate the exceptional…
Fugi has added two 50 watt and two 75 watt devices to it’s 7th-Generation X-Series Portfolio.
Fugi has added two 50 watt and two 75 watt devices to it’s 7th-Generation X-Series Portfolio.
United SiC enter into two distribution agreements, one with EDOM Technology, and another with Macnica to expand its…
United SiC enter into two distribution agreements, one with EDOM Technology, and another with Macnica to expand its business across asian markets.
The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace
The new enhancement-mode Gallium Nitride (eGaN) devices are aimed at critical applications in defense and aerospace
Paragraf’s graphene hall-effect sensors (GHS) has been deemed mission-ready for high-radiation applications in space by…
Paragraf’s graphene hall-effect sensors (GHS) has been deemed mission-ready for high-radiation applications in space by the UK’s National…
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