Because one size doesn’t fit all, Application Specific FETs (ASFETs) allow designers to more easily focus on the specs most relevant to the task…
Because one size doesn’t fit all, Application Specific FETs (ASFETs) allow designers to more easily focus on the specs most relevant to the task…
This article highlights Infineon Technology OptiMOS™ 40 V low-voltage power MOSFET to the market.
This article highlights Infineon Technology OptiMOS™ 40 V low-voltage power MOSFET to the market.
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
Swedish battery manufacturer Northvolt secures $600 million round to expand its battery production and recycling capacity…
Swedish battery manufacturer Northvolt secures $600 million round to expand its battery production and recycling capacity in Europe.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.
GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for…
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for fast switching, wide…
Power electronics company STMicroelectronics is acquiring France-based SOMOS Semiconductor, a power amplifier and RF specialist.
Power electronics company STMicroelectronics is acquiring France-based SOMOS Semiconductor, a power amplifier and RF specialist.
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
This article explores FinFET structure, their uses in a variety of applications, and the advantages and disadvantages…
This article explores FinFET structure, their uses in a variety of applications, and the advantages and disadvantages they have over MOSFETs.
New Si823Hx/825xx isolated gate drivers cut latency by 50% and increase transient immunity.
New Si823Hx/825xx isolated gate drivers cut latency by 50% and increase transient immunity.
This article details how the ascent of GaN is redefining power conversion.
This article details how the ascent of GaN is redefining power conversion.
This article highlights EPC's EPC9148 and EPC9153 demonstration boards for 48 V DC-DC conversion.
This article highlights EPC's EPC9148 and EPC9153 demonstration boards for 48 V DC-DC conversion.
II-VI Incorporated welcomes a new team member, settles business deals, and joins the Semiconductor Industry Association.
II-VI Incorporated welcomes a new team member, settles business deals, and joins the Semiconductor Industry Association.
The Modular Electric Vehicle Platform, or MEB, will serve as the basis of entire families of electrified compact Cars,…
The Modular Electric Vehicle Platform, or MEB, will serve as the basis of entire families of electrified compact Cars, SUVs and Vans
Tesla’s new 4680 battery solution offers a tabless electrode to improve thermal management and deliver 6x the amount of…
Tesla’s new 4680 battery solution offers a tabless electrode to improve thermal management and deliver 6x the amount of power while decreasing…
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including…
This article highlights GaN Systems GS-065-060-5-T-A that is designed to meet automotive reliability standards including AEC-Q101 qualification and…
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC…
This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC modules utilizing this…
The DMT47M2LDVQ can replace two discrete MOSFETs to reduce the board space footprint in many automotive applications,…
The DMT47M2LDVQ can replace two discrete MOSFETs to reduce the board space footprint in many automotive applications, from electric seat control…
Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.
Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.
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