The series of power supply units, ranging from 3 kW to 12 kW, focuses on efficiency with the goal of decarbonizing AI server racks.
The series of power supply units, ranging from 3 kW to 12 kW, focuses on efficiency with the goal of decarbonizing AI server racks.
PCIM 2024 displayed innovations to advance the power electronics industry, and EEPower was there. We share the highlights…
PCIM 2024 displayed innovations to advance the power electronics industry, and EEPower was there. We share the highlights in Part 2 of our onsite…
This is the first in a two-part round-up reviewing the innovations announced at PCIM 2024. EEPower was onsite to learn…
This is the first in a two-part round-up reviewing the innovations announced at PCIM 2024. EEPower was onsite to learn about the latest power…
Gallium nitride will be a key enabler for high-temperature electronics, including possible missions to Venus.
Gallium nitride will be a key enabler for high-temperature electronics, including possible missions to Venus.
TI showcased what it calls the industry's first GaN IPM for compact, energy-efficient motors at PCIM 2024 in Germany.
TI showcased what it calls the industry's first GaN IPM for compact, energy-efficient motors at PCIM 2024 in Germany.
BAE System and Eaton tested their electric drive solution on a commercial demonstration truck.
BAE System and Eaton tested their electric drive solution on a commercial demonstration truck.
More than 620 exhibiting companies will showcase their products and innovations at PCIM Europe in Nuremburg. Here's a…
More than 620 exhibiting companies will showcase their products and innovations at PCIM Europe in Nuremburg. Here's a quick look at some…
This article examines how GaN-based FETs enable high-performance motor inverters.
This article examines how GaN-based FETs enable high-performance motor inverters.
Teledyne’s GaN load switch is suitable for critical high-power applications requiring speed and efficiency.
Teledyne’s GaN load switch is suitable for critical high-power applications requiring speed and efficiency.
In case you missed our first-ever event for power engineers, you can still catch it on demand.
In case you missed our first-ever event for power engineers, you can still catch it on demand.
Navitas revealed an artificial intelligence data center technology roadmap with three times the power to support…
Navitas revealed an artificial intelligence data center technology roadmap with three times the power to support exponential growth in AI power…
ROHM’s 100 V Schottky Barrier Diode uses a trench MOS structure to lower reverse recovery times, while Vishay and SemiQ…
ROHM’s 100 V Schottky Barrier Diode uses a trench MOS structure to lower reverse recovery times, while Vishay and SemiQ release IGBT and silicon…
Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the…
Innoscience is expanding its family of VGaN products with a device rated to 100 V capable of significantly reducing the solution size for 48 V and…
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster,…
The changing world will rely more and more on the electrical power industry. Manufacturers have responded with faster, more compact, and more…
The company is demonstrating the new GaN power stages and DC-DC modules at APEC.
The company is demonstrating the new GaN power stages and DC-DC modules at APEC.
This article explores the differences between GaN FETs and silicon MOSFETs, provides recommendations for using generic…
This article explores the differences between GaN FETs and silicon MOSFETs, provides recommendations for using generic gate drivers with GaN FETs,…
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
The FETs use Transphorm’s GaN-on-Silicon substrate technology.
Two major companies make acquisitions impacting wide bandgap semiconductors and software-defined vehicle technology for…
Two major companies make acquisitions impacting wide bandgap semiconductors and software-defined vehicle technology for electric vehicles.
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in…
Central Semiconductor’s 650 V Super Junction N-Channel MOSFETs are designed to deliver power conversion efficiency in high-voltage,…
U.K.-based QPT’s qGaN technology solves the problems of overheating and radio frequency, allowing GaN applications to…
U.K.-based QPT’s qGaN technology solves the problems of overheating and radio frequency, allowing GaN applications to run at maximum speeds. Its…
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