Allegro Microsystems and Transphorm are joining forces to expand the application space for high-power gallium nitride circuits using the latest…
Allegro Microsystems and Transphorm are joining forces to expand the application space for high-power gallium nitride circuits using the latest…
High-voltage devices from Power Integrations and Magnachip Semiconductor use the latest gallium nitride and silicon power…
High-voltage devices from Power Integrations and Magnachip Semiconductor use the latest gallium nitride and silicon power technologies and advanced…
FETs from Infineon, Transphorm, and ROHM feature innovative packaging that increases performance and efficiency.
FETs from Infineon, Transphorm, and ROHM feature innovative packaging that increases performance and efficiency.
New silicon field-effect transistor and gallium nitride power switches from Littelfuse, Transphorm, and Magnachip…
New silicon field-effect transistor and gallium nitride power switches from Littelfuse, Transphorm, and Magnachip Semiconductor deliver automotive…
An experimental approach to investigate the impact of higher switching frequencies on the inverter and motor efficiency…
An experimental approach to investigate the impact of higher switching frequencies on the inverter and motor efficiency using SiC and GaN
In an interview with EE Power, GaN Systems CEO Jim Witham reveals significant upgrades to its GaN power platform,…
In an interview with EE Power, GaN Systems CEO Jim Witham reveals significant upgrades to its GaN power platform, including a 20 percent…
Cambridge GaN Devices has released the first-ever GaN devices with individual 2D barcoding to assist with die-level data…
Cambridge GaN Devices has released the first-ever GaN devices with individual 2D barcoding to assist with die-level data collection for process,…
Battery-powered industrial vehicles such as forklifts, manual handlers, or warehouse automatic vehicles require…
Battery-powered industrial vehicles such as forklifts, manual handlers, or warehouse automatic vehicles require high-current inverters to drive the…
A new and improved GaN technology is moving from the cell phone charger market into higher power, high-reliability…
A new and improved GaN technology is moving from the cell phone charger market into higher power, high-reliability applications. EE Power spoke…
The U.S. Department of Energy allocated $8 million to fund continued research and workforce development at PowerAmerica,…
The U.S. Department of Energy allocated $8 million to fund continued research and workforce development at PowerAmerica, an organization serving…
Wide bandgap products from ROHM, STMicroelectronics, and Toshiba leverage the capabilities of silicon carbide and gallium…
Wide bandgap products from ROHM, STMicroelectronics, and Toshiba leverage the capabilities of silicon carbide and gallium nitride to meet key…
Chinese restriction of germanium and gallium exports could have big implications for the global electronics industry.
Chinese restriction of germanium and gallium exports could have big implications for the global electronics industry.
Transphorm, in collaboration with Yaskawa Electric Corporation, has demonstrated a five-microsecond short-circuit…
Transphorm, in collaboration with Yaskawa Electric Corporation, has demonstrated a five-microsecond short-circuit withstand time with a gallium…
Navitas Semiconductor has released the GaN CRPS185 3,200 W Titanium Plus server power reference platform designed to…
Navitas Semiconductor has released the GaN CRPS185 3,200 W Titanium Plus server power reference platform designed to bring efficiency and high…
GaN Systems has announced a partnership with ACEpower, a leading developer of power supply and EV charging solutions for…
GaN Systems has announced a partnership with ACEpower, a leading developer of power supply and EV charging solutions for the Chinese market, to…
Nexperia has launched its first-ever insulated gate bipolar transistor (IGBT) device, expanding its portfolio of power…
Nexperia has launched its first-ever insulated gate bipolar transistor (IGBT) device, expanding its portfolio of power MOSFETs and offering…
When designing power applications with gallium-nitride (GaN) wide-bandgap technology, proper control of the gate-driving…
When designing power applications with gallium-nitride (GaN) wide-bandgap technology, proper control of the gate-driving circuit is essential to…
Airbus and STMicroelectronics will collaborate on research and development initiatives designed to create more efficient,…
Airbus and STMicroelectronics will collaborate on research and development initiatives designed to create more efficient, lighter-weight power…
The companies claim to be the first in the world to integrate GaN charging into an e-bike battery.
The companies claim to be the first in the world to integrate GaN charging into an e-bike battery.
Patented technologies from new market entrant QPT enable GaN circuits to operate at frequencies as high as 20 MHz,…
Patented technologies from new market entrant QPT enable GaN circuits to operate at frequencies as high as 20 MHz, unleashing new performance…
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