Infineon Technologies and Stellantis will collaborate to develop next-generation power architectures for Stellantis’ electric vehicles.
Infineon Technologies and Stellantis will collaborate to develop next-generation power architectures for Stellantis’ electric vehicles.
This article examines high electron GaN mobility transistors as an alternative to SiC in power electronics.
This article examines high electron GaN mobility transistors as an alternative to SiC in power electronics.
What causes failure in wide bandgap semiconductors, and how can engineers mitigate them?
What causes failure in wide bandgap semiconductors, and how can engineers mitigate them?
The 2.5 kV IGBT module with enhanced SLC+ technology sets a benchmark in reliability, tackling power and thermal cycling…
The 2.5 kV IGBT module with enhanced SLC+ technology sets a benchmark in reliability, tackling power and thermal cycling stress to ensure long-term…
Power converters from Vicor and Infineon can save space and reduce manufacturing costs in EVs, and address other automotive needs.
Power converters from Vicor and Infineon can save space and reduce manufacturing costs in EVs, and address other automotive needs.
Navitas’ IntelliWeave uses gallium nitride to operate energy-intensive data centers reliably and efficiently.
Navitas’ IntelliWeave uses gallium nitride to operate energy-intensive data centers reliably and efficiently.
This article examines how Fraunhofer is combining lateral and vertical geometry to develop vertical GaN power ICs and…
This article examines how Fraunhofer is combining lateral and vertical geometry to develop vertical GaN power ICs and related technology.
This article examines practical experiences and explains why switching transistors fail based on a flyback converter.
This article examines practical experiences and explains why switching transistors fail based on a flyback converter.
Transfer molded modules could meet new BEV requirements regarding power handling capability and electrical and thermal…
Transfer molded modules could meet new BEV requirements regarding power handling capability and electrical and thermal performance.
Power Integrations has upped its GaN game with InnoMux-2 IC, delivering more than 90% efficiency from a 1000 VDC bus and…
Power Integrations has upped its GaN game with InnoMux-2 IC, delivering more than 90% efficiency from a 1000 VDC bus and supplying up to 60 W from…
Even with the most reliable networks, network outages are inevitable for a host of reasons, and managing these outages in…
Even with the most reliable networks, network outages are inevitable for a host of reasons, and managing these outages in VFD systems becomes…
Learn how to select the right motor controller for your application.
Learn how to select the right motor controller for your application.
GaN and SiC technologies are being deployed across legacy silicon applications. What have we learned so far, and what’s to come?
GaN and SiC technologies are being deployed across legacy silicon applications. What have we learned so far, and what’s to come?
ST designed its newest STPower silicon carbide MOSFETs to improve efficiency, power density, and robustness for EV…
ST designed its newest STPower silicon carbide MOSFETs to improve efficiency, power density, and robustness for EV powertrains and charging circuits.
Working with user-programmable PMICs can be a new experience for engineers and advances in processor and…
Working with user-programmable PMICs can be a new experience for engineers and advances in processor and field-programmable gate array technology…
The compact power modules reduce switching losses and are easily scalable.
The compact power modules reduce switching losses and are easily scalable.
A new research facility eyes scalable materials and manufacturing techniques for power electronics.
A new research facility eyes scalable materials and manufacturing techniques for power electronics.
Trench MOS structures offer several benefits compared to traditional p-n junction solutions. Learn what they are here.
Trench MOS structures offer several benefits compared to traditional p-n junction solutions. Learn what they are here.
Integrating E-Mode GaNFETs with a GaN-based gate regulating circuit can significantly enhance the reliability and…
Integrating E-Mode GaNFETs with a GaN-based gate regulating circuit can significantly enhance the reliability and compatibility of gate driving for…
These advancements aim to reduce the footprint of MOSFETs while increasing power density and efficiency.
These advancements aim to reduce the footprint of MOSFETs while increasing power density and efficiency.
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