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SiC Modules, IGBTs and Super-Junction MOSFETs Introduced on Day One of PCIM

SiC Modules, IGBTs and Super-Junction MOSFETs Introduced on Day One of PCIM

Gate Drive Optocouplers  for High-Speed SiC FETs Deliver up to 2.5A

Gate Drive Optocouplers for High-Speed SiC FETs Deliver up to 2.5A

Toshiba Starts SiC Power Device Volume Production, Aims for 30% Market Share

Toshiba Starts SiC Power Device Volume Production, Aims for 30% Market Share

600V GaN Normally-Off “Gate Injection” Power Transistor Intro’d by Panasonic

600V GaN Normally-Off “Gate Injection” Power Transistor Intro’d by Panasonic

ROHM SiC MOS Module, without a Schottky Diode Enters High-Volume Production

ROHM SiC MOS Module, without a Schottky Diode Enters High-Volume Production

Transphorm Releases First JEDEC-Qualified 600V GaN-on-Silicon Power Devices

Transphorm Releases First JEDEC-Qualified 600V GaN-on-Silicon Power Devices

Global Power Device Comes out of Stealth, Launches SiC Devices

Global Power Device Comes out of Stealth, Launches SiC Devices

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

ROHM Claims First Mass-Produced SiC MOS Module Without a Schottky Diode

ROHM Claims First Mass-Produced SiC MOS Module Without a Schottky Diode

Mitsubishi Electric Develops 1,200V/1,200A SiC Power Module Technologies

Mitsubishi Electric Develops 1,200V/1,200A SiC Power Module Technologies

Microsemi Expands SiC Power Module Product Family in Industrial and Extended Temperature Ranges

Microsemi Expands SiC Power Module Product Family in Industrial and Extended Temperature Ranges

Cree Offers Fully-Qualified, Production-Ready All-SiC 100A Power Module

Cree Offers Fully-Qualified, Production-Ready All-SiC 100A Power Module

ROHM’s Ultra-Compact Transistor Package

ROHM’s Ultra-Compact Transistor Package

Infineon Introduces 5th Generation thinQ! SiC Schottky Barrier Diodes

Infineon Introduces 5th Generation thinQ! SiC Schottky Barrier Diodes

Transphorm Releases Industry’s First JEDEC Qualified 600V GaN HEMT

Transphorm Releases Industry’s First JEDEC Qualified 600V GaN HEMT