Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

GeneSiC Semiconductor announced the immediate availability of its second-generation hybrid mini-modules using 1,200V/100A SiC Schottky rectifiers with rugged silicon IGBTs – the GB100XCP12-227. The performance-price point at which this product is being released allows many power conversion applications to benefit from the reduction of the cost/size/weight/volume that neither silicon IGBT/ silicon rectifier solution, nor a pure SiC module can offer. These devices are targeted for use in a wide variety of applications including industrial motors, solar inverters, specialized equipment and power grid applications.

SiC Schottky/Si IGBT mini-modules (Co-packs) offered by GeneSiC are made with Si IGBTs that exhibit positive temperature coefficient of on-state drop, robust punch-through design, high-temperature operation and fast switching characteristics that are capable of being driven by commercial, commonly-available 15V IGBT gate drivers. The SiC rectifiers used in these Co-pack modules allow extremely low inductance packages, low on-state voltage drop and no reverse recovery. The SOT-227 package offers isolated baseplate, 12mm low-profile design that can be used flexibly as a standalone circuit element, high-current paralleled configuration, a phase Leg (two modules), or as a chopper circuit element.

"We listened to our key customers since the initial offering of this product almost 2 years back. This second-generation 1,200V/100A co-pack product has a low inductance design that is suitable for high-frequency, high-temperature applications. The poor high-temperature and reverse-recovery characteristics of silicon diodes critically limits the use of IGBTs at higher temperatures. GeneSiC’s low-VF, low-capacitance SiC Schottky diodes enable this breakthrough product" said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

Technical highlights of the GB100XCP12-227 include; on-state Drop of 1.9 V at 100 A, a positive temperature coefficient on VF, Tjmax = 175 degrees C, and turn-on energy losses of 23 microJoules (typical). All devices are 100% tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant industry-standard SOT-227 packages.