Global Power Device Comes out of Stealth, Launches SiC Devices

Global Power Device, Inc. (GPD) announced a new line of Silicon Carbide (SiC) diodes that delivers ultra-high performance at prices that are competitive with conventional Silicon diodes. The company's production-ready, 150mm Silicon Carbide Wafer processing technology reduces the cost of devices by up to 60%, and is expected to make SiC the value leader at the system level in mid-voltage and high-voltage power applications. The initial devices being introduced are 1,200V diodes rated for 15A and 30A. Additional products will be announced in the near future.

"The superior material properties of Silicon Carbide have been known for years. However, the high cost of manufacturing has restricted adoption to niche applications. Today, GPD's innovative approach unlocks the value of Silicon Carbide devices and provides a clear path for wide adoption," said Sung Joon Kim, CEO at GPD.

GPD will be making its technology available to early partners in the first half of 2013. Founded in 2010, GPD is committed to revolutionizing power electronics by offering the best value in Silicon Carbide devices to enable new levels of energy efficiency and reliability.