New Industry Products

SiC Modules, IGBTs and Super-Junction MOSFETs Introduced on Day One of PCIM

May 13, 2013 by Power Pulse1595211359

On the opening day of PCIM Europe 2013, Cree, Inc. introduced the first-commercially available silicon-carbide (SiC) six-pack power module in a standard 44mm package; IGBT-driver manufacturer CT-Concept Technologie AG launched a new dual-channel IGBT-driver core which can handle voltages up to 4.5kV; ON Semiconductor expanded its portfolio of IGBTs targeted at high-performance consumer appliance and industrial applications; and Toshiba Electronics Europe (TEE) announced the European launch of a family of 600V super-junction MOSFETs with integrated high-speed intrinsic diodes.

When compared to state-of-the-art silicon modules, Cree’s new SiC 1.2 kV, 50A modules deliver performance equivalent to silicon modules rated at 150A. “The efficient switching of the SiC module allows us to use them with significantly less derating than silicon IGBTs,” stated Dr. Jun Kang, research and applications manager, Yaskawa America, Inc. “This feature enables significantly higher frequency operation, which both increases fundamental output frequency and reduces passive component size in the motor drive.”

“Cree’s SiC power module family can also provide significant benefits to applications such as solar inverters, uninterruptible power supplies (UPS) and industrial power supplies,” explained Mrinal Das, product marketing manager, Cree Power and RF. “Even when designers simply substitute Si modules with SiC in motor drive applications, the improved performance of SiC reduces power losses, leading to reduced cooling requirements and, in turn, to a reduction in size, weight, complexity and the overall cost of the power electronics system.”

Concept’s new IGBT drivers are based on the company’s proprietary SCALE-2 ASIC technology, which integrates all required functions: driving, monitoring, status acknowledgement, isolated voltage supply (dc-dc converters) and isolation of all signals between the control and power sections. This approach also allows for full design flexibility when considering protection strategies, interface circuitry and the partitioning of the power inverter. UL-compliant, 2SC0635T gate-driver units provide isolation according to IEC 61800-5-1 and IEC 60664-1. Devices can be easily configured for parallel operation, and feature Advanced Active Clamping as well as short-circuit protection and under-voltage lockout.

Comments Wolfgang Ademmer, Concept’s CEO: “The 2SC0635T is the first commercially-available 4.5 kV IGBT driver to feature transformer-based signal isolation and an integral DC/DC converter. This enables engineers working on medium-voltage inverter applications such as traction, HVDC, STATCOM and wind-power converters to benefit from a compact, reliable design.”

The new generation Field Stop II (FSII) devices being launched at PCIM by ON Semiconductor improve switching characteristics and reduce losses by up to 30 percent leading to higher efficiency and translating into lower case temperature, giving designers options for improving overall system performance and reliability. Optimized for targeted applications, these devices show a reduction in case temperature of up to 20 percent over existing devices.

“An increase in the number of electrical appliances in use has led to a steady rise in the total energy consumption within the growing industrial and consumer markets,” said Paul Leonard, vice president and general manager for ON Semiconductor’s Power Discrete products. “ON Semiconductor’s continued development into thin wafer processing and implant technology allows for significant improvement in IGBT performance that is critical to support the increasing need for energy efficient solutions.”

The first group of FSII IGBTs is the NGTBxxN120IHRWG and NGTBxxN135IHRW; these devices feature optimized switching and reduced conduction losses for induction heating and soft switching applications operating at medium frequencies of 15 kilohertz (kHz) to 30 kHz. With excellent ruggedness and superior on-state characteristics at high currents, these devices are optimized, based on system requirements to enable higher efficiency and lower system losses. These high-speed IGBTs are providing industry leading system level performance in induction heating based products such as hot pots, rice cookers and microwave appliances. The family of devices is available in both 1200 volt (V) and 1350 V platform versions with current ratings of 20 amperes (A), 30 A and 40 A.

Further expansion of the FSII IGBT technology includes the NGTBxxN120FL2WG and NGTBxxN135FL2WG family of devices designed specifically for solar inverter, uninterrupted power systems (UPS), and inverter welder applications. With improved thermal characteristics, these new devices will have an operational junction temperature range of -55 to +175°C and increase in current ratings up to 100 A in TO-247 packages.

Based on the company’s fourth-generation 600V super junction DTMOS IV process, TEE’s new MOSFETs will improve power efficiency in switching power supplies, micro inverters, adaptors, and photovoltaic inverters. The new TK16A60W5, TK31J60W5 and TK39J60W5 achieve significant improvements in power efficiency by combining the industry’s leading RDS(ON)*A (ON-resistance area) characteristics with reverse recovery times. In addition, the use of a single epitaxial process ensures only small increases in ON resistance and recovery times at high temperatures.

The TK16A60W5 is supplied in a TO-220SIS package. Maximum current rating (ID) is 15.8A and RDS(ON) is 0.23Ω. The diode shows an excellent typical reverse recovery time (trr) of 100ns. In comparison, the standard version shows a trr of 280ns. Both the TK31J60W5 and TK39J60W5 are supplied in a TO-3P(N) package and have maximum currents of 30.8A and 38.8A respectively. Maximum respective RDS(ON) ratings (VGS = 10V) are just 0.099Ω and 0.074Ω . Typical trr diode characteristics are 135ns and 150ns. Variants in TO-247 packaging are scheduled to be available by autumn 2013.

Super junction MOSFETs offer ultra-low ON resistance without power loss penalties. Using Toshiba's state-of-the-art single epitaxial process, the fourth generation super junction 600V DTMOS IV MOSFET series provides a 30% reduction in RDS(ON)•A - a figure of merit (FOM) for MOSFETs - compared to its predecessor, DTMOS III. A reduction in RDS(ON)•A, makes it possible to house lower resistance chips in the same packages, helping to improve the efficiency and reduce the size of power supplies.