Toshiba Starts SiC Power Device Volume Production, Aims for 30% Market Share

Toshiba America Electronic Components, Inc. announced that Toshiba Corporation has started volume production of silicon-carbide (SiC) power devices, in anticipation of growing demand for industrial and automotive applications. Production is at Toshiba's Himeji Operations–Semiconductor in Hyogo Prefecture, Japan. Toshiba will manufacture 650V/12A Schottky Barrier Diodes (SBDs) as the first of its new line-up of SiC products. These devices feature a Vf of 1.7V when carrying 12A. They are rated for IRRM of 90 microamps at 650V.

Production capacity is initially set for one million devices. Toshiba aims to secure 30 percent market share in 2020 by expanding its SiC product line in the near future. These SBDs are suited for applications that include power conditioners for photovoltaic power generation systems. SBDs can also act as replacements for silicon diodes in switching power supplies, where they are approximately 50 percent more efficient.

SiC power devices offer more stable operation than current silicon devices - even at high voltages and currents - as they significantly reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and suit industrial applications ranging from servers to inverters and trains to automotive systems.