Latest Wide Bandgap New Products

GaN FETs Extend Cost/Performance Benefits over Silicon

new products Mar 14, 2017 by Jeff Shepard

New-Generation Transistor Arrays with DMOS FET Outputs

new products Mar 13, 2017 by Jeff Shepard

Misubishi adds 600V SiC Schottky-Barrier Diodes

new products Mar 05, 2017 by Jeff Shepard

Opening of Blacksburg Virginia eGaN FET and IC Applications Center

Efficient Power Conversion Corporation (EPC) is proud to announce the opening of an Applications Center in Blacksburg,…

Efficient Power Conversion Corporation (EPC) is proud to announce the opening of an Applications Center in Blacksburg, Virginia.

new products Mar 03, 2017 by EPC

SiC Gate Driver Optimized for 62mm Modules

new products Feb 27, 2017 by Jeff Shepard

1200V 75mOhm SiC FET in Low-Inductance Package

new products Feb 22, 2017 by Jeff Shepard

Integrated Half-Bridge GaN Power IC

new products Feb 20, 2017 by Power Pulse1595211359

48W Aux. Power Supply Evaluation Board for SiC FETs

new products Feb 13, 2017 by Jeff Shepard

Motor Control for SiC Drives Embedded in Automotive MCUs

new products Feb 06, 2017 by Jeff Shepard

DMOS Transistor Arrays with Data Storage Function

new products Feb 06, 2017 by Jeff Shepard

GaN Transistor Thermal RC Models Enhance SPICE Simulations

new products Feb 02, 2017 by Jeff Shepard

650V and 1200V SiC Schottkys for Multi-kW Designs

new products Jan 31, 2017 by Power Pulse1595211359

650V SiC Schottkys Handle 70% More Surge Current

new products Jan 12, 2017 by Jeff Shepard

Ultra-Wideband GaN Doherty Power Amplifier

new products Jan 11, 2017 by Jeff Shepard

900V, 10 mOhm SiC MOSFET for EV Drive Trains

new products Jan 09, 2017 by Jeff Shepard

GaN Enables Wireless Power Modules to Replace Connectors

new products Jan 03, 2017 by Power Pulse1595211359

SiC Technology Introduced into Formula E

ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017…

ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017 Formula E season in Hong Kong.

new products Dec 19, 2016 by ROHM

Next-Generation Output Transistor Arrays

Toshiba Electronics Europe has announced a series of next-generation output transistor arrays that feature a DMOS FET…

Toshiba Electronics Europe has announced a series of next-generation output transistor arrays that feature a DMOS FET type sink output.

new products Dec 13, 2016 by Toshiba Europe

Isolated 2A Gate Driver for IGBTs, GaN and SiC

new products Nov 14, 2016 by Power Pulse1595211359

500V and 700V PLZT Capacitors for Use with GaN and SiC

new products Nov 10, 2016 by Power Pulse1595211359