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SiC Technology Introduced into Formula E

SiC Technology Introduced into Formula E

ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017 Formula E season in Hong Kong.

new products Dec 19, 2016 by ROHM
Next-Generation Output Transistor Arrays

Next-Generation Output Transistor Arrays

Toshiba Electronics Europe has announced a series of next-generation output transistor arrays that feature a DMOS FET type sink output.

new products Dec 13, 2016 by Toshiba Europe
Isolated 2A Gate Driver for IGBTs, GaN and SiC

Isolated 2A Gate Driver for IGBTs, GaN and SiC

new products Nov 14, 2016 by Power Pulse1595211359
500V and 700V PLZT Capacitors for Use with GaN and SiC

500V and 700V PLZT Capacitors for Use with GaN and SiC

new products Nov 10, 2016 by Power Pulse1595211359
1200V SiC Trench FETs Reduce RDS(on) by 50%

1200V SiC Trench FETs Reduce RDS(on) by 50%

new products Nov 09, 2016 by Power Pulse1595211359
Miniaturized DC-DCs for IGBT & SiC Gate Drives

Miniaturized DC-DCs for IGBT & SiC Gate Drives

new products Nov 09, 2016 by Power Pulse1595211359
Gen-2 TO-220 650V GaN FET with 72mOhms RDS(on)

Gen-2 TO-220 650V GaN FET with 72mOhms RDS(on)

new products Nov 09, 2016 by Power Pulse1595211359
High-Speed Gate Driver for GaN Power Transistors

High-Speed Gate Driver for GaN Power Transistors

new products Nov 06, 2016 by Power Pulse1595211359
High Temperature Power Module for Harsh Environments

High Temperature Power Module for Harsh Environments

Raytheon UK’s Integrated Power Solutions (IPS) business unit in Glenrothes, Scotland, has developed a high temperature, small formfactor bridge…

new products Nov 01, 2016 by Raytheon Technologies
All-SiC High Performance Half-Bridge Power Module and Gate Driver Combination

All-SiC High Performance Half-Bridge Power Module and Gate Driver Combination

Wolfspeed, A Cree Company, and a leading global supplier of silicon carbide (SiC) power products, has introduced the first fully-qualified…

new products Nov 01, 2016 by Wolfspeed
Test Solution Targets SiC and GaN Power Devices up to 3kV

Test Solution Targets SiC and GaN Power Devices up to 3kV

new products Oct 25, 2016 by Jeff Shepard
The World039s Fastest GaN FET Driver

The World039s Fastest GaN FET Driver

Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the word’s fastest…

new products Oct 15, 2016 by pSemi Corporation
SiC Schottky Optimized for High-Efficiency PFC Circuits

SiC Schottky Optimized for High-Efficiency PFC Circuits

new products Oct 12, 2016 by Jeff Shepard
1000V / 65mOhm SiC MOSFET

1000V / 65mOhm SiC MOSFET

new products Oct 05, 2016 by Jeff Shepard
High-Isolation SiC Gate Drivers

High-Isolation SiC Gate Drivers

new products Sep 28, 2016 by Jeff Shepard
59-mOhm 1200V SiC MOSFET Rated for 65 Amps

59-mOhm 1200V SiC MOSFET Rated for 65 Amps

new products Sep 28, 2016 by Jeff Shepard
Full SiC 1500V PV Inverters are 99% Efficient

Full SiC 1500V PV Inverters are 99% Efficient

new products Sep 20, 2016 by Jeff Shepard
Highest Power L-Band Radar GaN HEMT

Highest Power L-Band Radar GaN HEMT

new products Sep 19, 2016 by Jeff Shepard
1200V / 0.04Ω GaN Switches with integral ISO-DRIVER

1200V / 0.04Ω GaN Switches with integral ISO-DRIVER

new products Sep 18, 2016 by Jeff Shepard
GaN Enhances Efficiency of Redundant Power Supplies

GaN Enhances Efficiency of Redundant Power Supplies

new products Sep 14, 2016 by Jeff Shepard