SiC Technology Introduced into Formula E
ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017 Formula E season in Hong Kong.
At the start of season three, the leading Japanese semiconductor manufacturer started sponsoring and officially partnering with the Venturi Formula E team. The exciting collaboration between ROHM and Venturi in Formula E highlights the key to success in the all-electric racing series – power management. The challenge of Formula E is to find the most efficient way of using the energy provided by the battery and applying it on the road. To do this, ROHM developed new power device technology using silicon carbide. This material can withstand much higher electric fields than conventional silicon, which results in extremely low losses of power and higher temperature resistance. Thus, ROHM and Venturi hope to gain an edge over the competition while also pushing forward the development of new technical solutions to increase power conversion efficiency.
The inverter for season three features embedded SiC Schottky diodes, making it 2 kg lighter than the inverter for season two. Electric efficiency has been increased by 1.7%, while the volume of heat extraction components has been reduced by 30%. But this is just a start. In season four, the SiC MOSFET integrated inverter will demonstrate drastic changes once again.
Founded in 1958, ROHM provides LSI and discrete semiconductors characterized by outstanding quality and reliability for a broad range of markets, including automotive, industrial and consumer market via its global development and sales network. In the analog power field, ROHM proposes the suitable solution for each application with power devices such as SiC, driver ICs to maximize their performance, and peripheral components such as transistors, diodes and resistors.