1200V 75mOhm SiC FET in Low-Inductance Package
Wolfspeed, a Cree Company, has expanded its innovative C3M™ platform through the introduction of a 1200V, 75mΩ MOSFET in its recently released low-inductance discrete packaging. The new device simplifies designs and enables an increase in frequency while maintaining efficiency, lowering system cost, reducing circuit EMI, and enabling 99% efficiency levels in three-phase power factor correction circuits.
These features enable designers of applications such as telecom power supplies, elevators, grid-tied storage, on and offboard EV charging, as well as factory automation to increase switching frequency while maintaining efficiency, decreasing system size and bill of materials.
â€œWe are very encouraged about the new SiC products being introduced in new innovative discrete packaging,â€ said Kurt Goepfrich, a Siemens hardware architect. â€œThese new package options, such as the surface-mount 7L D2PAK, allow us to explore new topologies not possible with existing products available on the market today.â€
This device achieves the industryâ€™s lowest figure-of-merit for any SiC MOSFET at 1200V. Wolfspeed has released this device in a 4L TO-247 package and plans to release it in a 7L D2PAK in the coming weeks.
â€œSiC MOSFETs have proven to be beneficial for many high-power applications connected to a battery simply due to the improved efficiency.â€ explains John Palmour, Wolfspeedâ€™s CTO. â€œIn the case where power is bidirectional, such as grid-connected ac-dc, the potential cost savings are significantly increased due to the reduction in the size of the input filter.â€
The device features Wolfspeedâ€™s third generation C3M planar MOSFET technology, which engineers have already designed into various automotive and industrial applications. It features low on-resistance (75mÎ©) combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as ac-ac converters and chargers.
The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest Wolfspeedâ„¢ SiC MOSFET chips. The 4L TO247 package delivers a 3x reduction in total switching losses compared to a conventional TO-247-3 package.
The 7L D2PAK surface-mount package, specifically designed for high-voltage MOSFETs, practically eliminates the source inductance found in other packages and has a footprint 52 percent smaller than D3PAKs. This is made possible by the small die size and high-blocking capability of C3M planar MOS technology.
Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. These higher voltage SiC MOSFETs solve many of the limitations of silicon super-junction MOSFETs that make them impractical to use in two-level topologies. SiC has significantly lower output capacitance nonlinearity, making it possible to reduce the dead-time thereby minimizing total harmonic distortion at higher switching frequencies.
The new 1200V, 75mOhm MOSFET is available in a through-hole, 4L TO247 package and is listed as part number C3M0075120K and is currently available for purchase from several top distributors. The surface-mount version of this device, C3M0075120J, will be released in the coming weeks. Like the 4L-TO247, the surface-mount devices include a Kelvin-source pin to help minimize gate-ringing and reduce system losses.