Opening of Blacksburg Virginia eGaN FET and IC Applications Center
Efficient Power Conversion Corporation (EPC) is proud to announce the opening of an Applications Center in Blacksburg, Virginia.
This center will increase the reach of EPC to support research and development for the applications of enhancement-mode gallium nitride transistors and ICs. In addition to traditional FET and IC power conversion applications, GaN technology has enabled emerging applications such as wireless power transfer, LiDAR for autonomous vehicles, and envelope tracking for high bandwidth 4G and 5G communications.
In support of the center’s opening, Suvankar Biswas, Ph.D. has been appointed as senior applications engineer. Dr. Biswas’ experience includes work involving converter topology for integration of photovoltaic modules, grid-tied inverters, and storage. Additionally, Suvankar has research experience in the integration of harvested power in mobile devices, power delivery architecture in mobile platform-level systems, and plug-in hybrid vehicles and their connectivity with the Smart Grid. He is an active member of IEEE with numerous peer-reviewed published articles. Dr. Biswas obtained his bachelor of electrical engineering degree from the Indian Institute of Technology Kharagpur and his doctorate degree from the University of Minnesota.
“The opening of the Blacksburg Applications Center is an important component of our continuous efforts to focus on customer partnerships when designing eGaN technology-based solutions and demonstrating eGaN transistors’ superior performance over MOSFETs and LDMOS. We are very pleased to have Dr. Biswas joining us at this time of widespread, fast growing adoption of gallium nitride-based solutions,” said Alex Lidow, CEO and co-founder of Efficient Power Conversion Corporation.
About EPC
EPC is the leader in enhancement mode gallium nitride based power management devices and was the first to introduce enhancementmode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFET.
