350V GaN Power Transistor is 20-Times Smaller Than Comparable Silicon
Efficient Power Conversion has announced the EPC2050, a 350V GaN transistor with a maximum RDS(on) of 65mΩ and a 26A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400V input to 48V output LLC converter for telecom or server power supplies.
The EPC2050 is just 1.95 mm x 1.95 mm (3.72 mm2). Designers no longer have to choose between size and performance - they can have both. Given the tiny size of the EPC2050, a highly-efficient half-bridge with gate driver occupies five times less area than a comparable silicon solution.
Despite the small size of the chip-scale packaging, EPC2050 handles thermal conditions more efficiently than plastic packaged MOSFETs.
"The performance and cost gap of silicon with eGaN technology widens with the 350V EPC2050 that is almost 20-times smaller than the closest silicon MOSFET." said Alex Lidow, EPC's CEO.
The EPC9084 development board is a 350V maximum device voltage, half-bridge featuring the EPC2050, and the Silicon Labs Si8274GB1-IM gate driver. This 2" x 1.5" (51 mm x 38 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the 350V EPC2050 eGaN FET.
Price and Availability
The EPC2050 eGaN FET is priced for 1K units at $3.19 each and the EPC9084 development board is priced at $118.75 each. Both products are available for immediate delivery from Digi-Key