This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin…
This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option.
This article highlights ROHM power supply monitoring IC, the BD39040MUF-C, with BIST (Built-In Self Test) that supports…
This article highlights ROHM power supply monitoring IC, the BD39040MUF-C, with BIST (Built-In Self Test) that supports functional safety.
This article highlights AgileSwitch Augmented Switching Accelerated Development Kit or ASDAK for power electronics…
This article highlights AgileSwitch Augmented Switching Accelerated Development Kit or ASDAK for power electronics engineers working with SiC…
This article highlights Microchip’s 700V SiC MOSFETs, and 700V and 1200V SiC Schottky Barrier Diodes (SBDs) join its…
This article highlights Microchip’s 700V SiC MOSFETs, and 700V and 1200V SiC Schottky Barrier Diodes (SBDs) join its existing portfolio of SiC…
Efficient Power Conversion (EPC) will provide their industry-leading gallium nitride-based power devices in wafer form…
Efficient Power Conversion (EPC) will provide their industry-leading gallium nitride-based power devices in wafer form for ease of power systems…
This article highlights Toshiba launched of “TB67H450FNG,” the latest addition to its line-up of brushed DC motor…
This article highlights Toshiba launched of “TB67H450FNG,” the latest addition to its line-up of brushed DC motor driver ICs with maximum…