UnitedSiC adds new 4-lead Kelvin device to UF3C FAST FET series
This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option.
UnitedSiC adds new 4-lead Kelvin device to UF3C “FAST” FET series
June 20, 2019, Princeton, New Jersey: UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has further expanded its UF3C FAST series product offering by introducing an additional 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option. The UF3C120150K4S offers a typical on-resistance (RDS(on)) of 150 mΩ, bringing the total number of 4-leaded FAST Series devices up to six and extending the on-resistance range of the entire series from 30 mΩ all the way up to 150 mΩ.
With a maximum operating temperature of 175°C, the UF3C120150K4S offers excellent reverse recovery, low gate charge and low intrinsic capacitance. The ESD protected, HBM class 2 TO-247-4L package offers faster switching and much cleaner gate waveforms compared to a standard 3-leaded TO-247. The 4-pin Kelvin package avoids gate ringing and false triggering which would normally require switching speeds to be limited to manage the large common source inductance of 3-leaded packages. This device is ideal for EV charging, photovoltaic inverters, switch mode power supplies, power factor correction (PFC) modules, motor drives and induction heating.
UnitedSiC’s new UF3C FAST SiC series, which now totals 13 devices, is available in TO-247-3L and TO-247-4L packages with 1200V and 650V options. The range offers very fast switching, high-power devices in a package capable of high-power dissipation based on its efficient “cascode” configuration. The 4-terminal Kelvin package offers easy screw or clamp mounting with very low junction-to-case thermal resistance, taking advantage of the high junction temperature capabilities of SiC.
Unique to UnitedSiC’s entire UJ3C and UF3C SiC FET portfolio is its true “drop-in replacement” functionality. Designers can significantly enhance system performance, without the need to change gate drive voltage, by replacing their existing Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices with the UnitedSiC FETs.
Please visit UnitedSiC Cascodes for more datasheets and UnitedSiC FET User Guide for a SiC FET User Guide highlighting practical solutions and guidelines for using RC snubbers with fast switching SiC devices.
UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC-DC converters and traction drives, as well as telecom/server power supplies, variable-speed motor drives, and solar PV inverters.