EEPower

Latest Power FETs New Products

Categories

Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

650V/60A Bottom-Side-Cooled GaN FET for Space, Military and COTS Designs

650V/60A Bottom-Side-Cooled GaN FET for Space, Military and COTS Designs

100V GaN Power Transistor is 30-Times Smaller Than Comparable Silicon

100V GaN Power Transistor is 30-Times Smaller Than Comparable Silicon

Off-Line Converters with Rugged 800V Embedded FET for 5-30V Power Supplies

Off-Line Converters with Rugged 800V Embedded FET for 5-30V Power Supplies

GaN FET Driver Delivers Fast Switching to Solid-State LiDAR Systems

GaN FET Driver Delivers Fast Switching to Solid-State LiDAR Systems

350V GaN Power Transistor is 20-Times Smaller Than Comparable Silicon

350V GaN Power Transistor is 20-Times Smaller Than Comparable Silicon

50-Amp High-Voltage Vertical GaN Power Semiconductors

50-Amp High-Voltage Vertical GaN Power Semiconductors

Fixed-Frequency PWM Controller and Integrated Power FET

Fixed-Frequency PWM Controller and Integrated Power FET

High-Power GaN Converter IMS Evaluation Platform

High-Power GaN Converter IMS Evaluation Platform

N-channel FET driver ICs Suitable for Rapid-Charging Designs

N-channel FET driver ICs Suitable for Rapid-Charging Designs

1.8kW RF Device is Industry’s Most Powerful GaN-on-SiC Transistor

1.8kW RF Device is Industry’s Most Powerful GaN-on-SiC Transistor

Record-Setting 100 V/120A GaN Power Transistor

Record-Setting 100 V/120A GaN Power Transistor

120A / 650V GaN Power Transistor Can Double Power Conversion Density

120A / 650V GaN Power Transistor Can Double Power Conversion Density

Battery Protection IC with Integrated FET for 1-Cell Li-ion Systems

Battery Protection IC with Integrated FET for 1-Cell Li-ion Systems

GaN-on-SiC Fully-Matched High-Power Transistor Offers 50W at 5-6 GHz

GaN-on-SiC Fully-Matched High-Power Transistor Offers 50W at 5-6 GHz

Renesas’ Rad-Hard 100V and 200V GaN FET DC-DC Solutions use EPC Die

Renesas’ Rad-Hard 100V and 200V GaN FET DC-DC Solutions use EPC Die

High-Voltage 3-Phase Motor Driver IC with Integrated IGBT

High-Voltage 3-Phase Motor Driver IC with Integrated IGBT

High-Voltage Multi-Channel Solenoid and Unipolar Motor Driver IC

High-Voltage Multi-Channel Solenoid and Unipolar Motor Driver IC

Toshiba Electronics Europe (TEE) announced the launch of a multi-channel solenoid and unipolar motor driver IC (TB67S111PG) that delivers…


40V GaN Power Transistor is 8X Smaller than Equivalently-Rated MOSFETS

40V GaN Power Transistor is 8X Smaller than Equivalently-Rated MOSFETS

Transistor Arrays Handle up to 50V / 0.5A with 40% Lower Power

Transistor Arrays Handle up to 50V / 0.5A with 40% Lower Power