N-channel FET driver ICs Suitable for Rapid-Charging Designs
Toshiba Electronics Europe today announced the launch of two new N-channel MOSFET drivers suitable for rapid-charging and other high-current applications. The new TCK401G (active-high) and TCK402G (active-low) charge pump driver ICs are suitable for high-current mobile charging applications when used in conjunction with low RDS(on) N-channel MOSFETs.
The driver ICs support several built-in safety functions, including overvoltage protection, inrush current reduction and auto output discharge.
Operating from an input voltage in the range 2.7- to 28-Vdc, the devices draw just 121μA of quiescent current (IQ). Switching times for the gate voltage (VGATE) are 0.58ms (ON) and 16.6μs (OFF).
A high-efficiency power supply circuit can be realized by using one of the new drivers with one or two external N-channel MOSFETs that have a maximum voltage rating and on-resistance suitable for the intended application.
As an example, the combination of a TCK40xG driver IC and the low on-resistance SSM6K513NU MOSFET is ideal for mobile or consumer applications, as it makes it possible to build a 100W power supply with a very compact footprint.
Even with the high level of integration, the driver ICs are still housed in the small industry-leading WCSP6E package, measuring just 0.8mm × 1.2mm × 0.55mm.
Volume shipment of the new MOSFET driver ICs has started.