100V GaN Power Transistor is 30-Times Smaller Than Comparable Silicon
Efficient Power Conversion (EPC) has announced the EPC2051, a 100V GaN transistor with a maximum RDS(on) of 25mΩ and a 37A pulsed output current for high efficiency power conversion in a tiny 1.1mm2 footprint.
Applications demanding higher efficiency and power density no longer have to choose between size and performance. The EPC2051 measures just 1.30mm x 0.85mm (1.1 mm2). Despite the small footprint, operating in a 50V to 12V buck converter, the EPC2051 achieves 97% efficiency at a 4A output while switching at 500kHz.
In addition, the low cost of the EPC2051 brings the performance of GaN FETs at a price comparable to silicon MOSFETs. Applications benefiting from this performance, small size, and low cost include 48V input power converters for computing and telecom systems, LiDAR, LED Lighting, and Class-D audio.
"The ability of eGaN based power devices to operate efficiently at high frequency widens the performance and cost gap with silicon. The 100V, EPC2051, is 30 times smaller than the closest silicon MOSFET." said Alex Lidow, EPC's CEO.
The EPC9091 development board is a 100V maximum device voltage, half bridge featuring the EPC2051, and the UP1966A gate driver from uPI Semiconductor. This 2" x 2" (50.8mm x 50.8mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the 100V EPC2051 eGaN FET.
Price and Availability
The EPC2051 eGaN FET is priced for 1K units at $0.67 each and $0.37 in 100K volumes and the EPC9091 development board is priced at $118.75 each.
Both products are available for immediate delivery from Digi-Key.