EEPower

Latest Gallium Nitride New Products

Categories

Expandable and Integrated Bluetooth 5 IC is AEC-Q100 Qualified

Expandable and Integrated Bluetooth 5 IC is AEC-Q100 Qualified

TI Announces New Portfolio of Ready-to-Use 600V GaN FET Power Stages

TI Announces New Portfolio of Ready-to-Use 600V GaN FET Power Stages

Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support…


GaN Systems Launches New Products and Provides GaN Design Expertise at Chinas PEAC Power Conference

GaN Systems Launches New Products and Provides GaN Design Expertise at Chinas PEAC Power Conference

GaN Systems recently announced the details of its participation at the IEEE International Power Electronics and Application Conference and…


new products Oct 30, 2018 by GaN Systems
Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

AI Chip Claims Dramatic Advantages in Latency and Power-Efficiency

AI Chip Claims Dramatic Advantages in Latency and Power-Efficiency

Authenticator IC with SHA3-256 Cryptographic Engine for Embedded Systems

Authenticator IC with SHA3-256 Cryptographic Engine for Embedded Systems

DC-DCs Optimized for Radio Frequency Power Amplifiers using GaN Transistors

DC-DCs Optimized for Radio Frequency Power Amplifiers using GaN Transistors

Low-side Gate Driver IC for IGBTs and MOSFETs

Low-side Gate Driver IC for IGBTs and MOSFETs

STMicroelectronics and Leti Develop GaN-on-Silicon Technology for Power Conversion Applications

STMicroelectronics and Leti Develop GaN-on-Silicon Technology for Power Conversion Applications

STMicroelectronics and Leti today announced their cooperation to industrialize GaN (gallium nitride)-on-silicon technologies for power switching…


650V/60A Bottom-Side-Cooled GaN FET for Space, Military and COTS Designs

650V/60A Bottom-Side-Cooled GaN FET for Space, Military and COTS Designs

GaN Microelectronics for Next-Gen Military and Communications Systems

GaN Microelectronics for Next-Gen Military and Communications Systems

H-bridge Driver IC Supporting 1.8V Low-Voltage and 1.6A Large-Current Drive

H-bridge Driver IC Supporting 1.8V Low-Voltage and 1.6A Large-Current Drive

100V GaN Power Transistor is 30-Times Smaller Than Comparable Silicon

100V GaN Power Transistor is 30-Times Smaller Than Comparable Silicon

Thick-Film Chip Resistors Feature 3X Higher Power Rating

Thick-Film Chip Resistors Feature 3X Higher Power Rating

LLC Current-Resonant Controller IC with Built-in Full Protection Functions

LLC Current-Resonant Controller IC with Built-in Full Protection Functions

600-V 70mΩ GaN Power Stage with Integrated Driver and Protection

600-V 70mΩ GaN Power Stage with Integrated Driver and Protection

Powerfully-Cool, Light-Weight, Open-Fin, Low-Profile IC Coolers

Powerfully-Cool, Light-Weight, Open-Fin, Low-Profile IC Coolers

ASIL Wheel Speed Sensor IC

ASIL Wheel Speed Sensor IC

Flex Power Modules Debuts 700W Half-Brick DC-DC Converters to Power RFPA Applications in LDMOS or GaN Technology

Flex Power Modules Debuts 700W Half-Brick DC-DC Converters to Power RFPA Applications in LDMOS or GaN Technology

Flex Power Modules announced the release of the PKJ4000 series of DC/DC converters primarily targeting radio frequency power amplifier (RFPA)…


700W Half-Brick DC-DCs for RFPA Designs in LDMOS or GaN

700W Half-Brick DC-DCs for RFPA Designs in LDMOS or GaN