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Hermetic 1200V SiC Power FETs

Hermetic 1200V SiC Power FETs

ULVAC Inc and Oxford Instruments Plasma Technology Collaborate to Bring Atomic Scale Processing Solutions to the Japanese Power and RF Markets

ULVAC Inc and Oxford Instruments Plasma Technology Collaborate to Bring Atomic Scale Processing Solutions to the Japanese Power and RF Markets

Oxford Instruments Plasma Technology announces a key collaboration which will bring leading-edge deposition and etch technology solutions to GaN-…


Alpha and Omega Semiconductor Introduces High-Current EZ Buck Regulator

Alpha and Omega Semiconductor Introduces High-Current EZ Buck Regulator

Alpha and Omega Semiconductor Limited today introduced a new family of EZBuck™ regulators.


AEC Qualified eGaN FETs Help Lidar Systems See Better Increase Efficiency and Reduce Costs in 48 V Automotive Power Systems

AEC Qualified eGaN FETs Help Lidar Systems See Better Increase Efficiency and Reduce Costs in 48 V Automotive Power Systems

EPC announces that its EPC2206 and EPC2212 discrete transistors are AEC Q101 qualified.


new products Jan 16, 2019 by EPC
Wolfspeed Introduces Next-Gen SiC Diode for Renewable Energy Electric Vehicle Applications

Wolfspeed Introduces Next-Gen SiC Diode for Renewable Energy Electric Vehicle Applications

Wolfspeed, A Cree Company, has introduced the 5th generation (C5D) 1700V SiC Schottky diode that features essentially no switching losses and the…


new products Jan 15, 2019 by Wolfspeed
Wide Terminal Low-Ohmic High Power Thick-Film Chip Resistor

Wide Terminal Low-Ohmic High Power Thick-Film Chip Resistor

ROHM has recently announced the availability of a new lineup of high power wide terminal thick-film chip resistors (10-910mΩ) ideal for current…


new products Jan 09, 2019 by ROHM
Cree and STMicroelectronics Announce MultiYear Silicon Carbide Wafer Supply Agreement

Cree and STMicroelectronics Announce MultiYear Silicon Carbide Wafer Supply Agreement

Cree, Inc. recently announced that it signed a multi-year agreement to produce and supply its Wolfspeed® silicon carbide (SiC) wafers to…


new products Jan 09, 2019 by Cree
Reverse conducting IGBT with protecting features delivers innovative solution for induction heating applications

Reverse conducting IGBT with protecting features delivers innovative solution for induction heating applications

Infineon Technologies AG is introducing the TRENCHSTOP™ Feature IGBT Protected Series for Induction Heating. Compared to a standard RC-H5 reverse…


IGSS GaN and SilTerra Demonstrate Powerful New Technology to  Unlock US12 Billion Semiconductor Opportunity

IGSS GaN and SilTerra Demonstrate Powerful New Technology to Unlock US12 Billion Semiconductor Opportunity

IGSS GaN (IGaN) and SilTerra Malaysia Sdn. Bhd. are pleased to announce the impressive results of their recent technology transfer partnership,…


new products Jan 09, 2019 by IGSS GaN
Proton-Electrotex Visits the Official Distributor in Japan

Proton-Electrotex Visits the Official Distributor in Japan

Proton-Electrotex paid a visit to Japan kindly assisted by the Eich Corporation, the official representative of the company in the region.


GaN-Based Conduction Cooled AC-DCs Pack 504W in 4” x 2.4” Footprint

GaN-Based Conduction Cooled AC-DCs Pack 504W in 4” x 2.4” Footprint

1350V, 20A IGBT with Integrated Gate Driver Targets Induction Heating Designs

1350V, 20A IGBT with Integrated Gate Driver Targets Induction Heating Designs

Osram and GaN Systems Introduce Ultrafast Laser Driver with High-Power Multi-Channel for LiDAR

Osram and GaN Systems Introduce Ultrafast Laser Driver with High-Power Multi-Channel for LiDAR

Osram Opto Semiconductors announced an ultrafast laser driver with a high-power, multi-channel Surface Mount (SMT) laser for LiDAR (light detection…


Schurter Announces UAI 1206 a Chip Fuse for High Demands

Schurter Announces UAI 1206 a Chip Fuse for High Demands

With the UAI 1206, SCHURTER offers a pulse and temperature resistant chip fuse with slow release characteristics for applications in which aging…


Dual-Channel Isolated MOSFET Gate Driver ICs with Accurate and Stable Timing

Dual-Channel Isolated MOSFET Gate Driver ICs with Accurate and Stable Timing

Next-Generation SiC Transistors Claim World’s Lowest On-State Resistance

Next-Generation SiC Transistors Claim World’s Lowest On-State Resistance

GaN FETs Enable Military-Grade High-Frequency Power Supply

GaN FETs Enable Military-Grade High-Frequency Power Supply

ASIL-Certified BLDC System Basis MOSFET Driver

ASIL-Certified BLDC System Basis MOSFET Driver

GaN Systems Onboard in an Abundance of Innovative Products at CES 2019

GaN Systems Onboard in an Abundance of Innovative Products at CES 2019

GaN Systems invites visitors at the Consumer Electronics Show (CES) to see the latest GaN powered breakthroughs.


new products Dec 17, 2018 by GaN Systems
H-bridge Driver IC Supporting 1.8V Low-Voltage and 4.0A Current Drive

H-bridge Driver IC Supporting 1.8V Low-Voltage and 4.0A Current Drive