German semiconductor giant Infineon will host a virtual Wide-Bandgap Developer Forum on March 11. Here’s what attendees can expect.
German semiconductor giant Infineon will host a virtual Wide-Bandgap Developer Forum on March 11. Here’s what attendees can expect.
This article is the first in a series of articles discussing three topics that can help power systems designers achieve…
This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…
The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon
The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon
The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into…
The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into the medium-voltage grid.
This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs…
This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs and Superjunction FETs in…
Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the…
Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the railway market.
A team of researchers led by researcher Liwen Sang has developed a microelectromechanical systems (MEMS) resonator…
A team of researchers led by researcher Liwen Sang has developed a microelectromechanical systems (MEMS) resonator capable of stable operation in…
This article highlights Chang Sung Corporation upgraded High Flux Core called HIGH FLUX TITANIUM Series (GT Grade) that…
This article highlights Chang Sung Corporation upgraded High Flux Core called HIGH FLUX TITANIUM Series (GT Grade) that is specialized in server…
ROHM Semiconductor recently wrapped up construction on a new five-floor SiC power device factory that sources 100% of its…
ROHM Semiconductor recently wrapped up construction on a new five-floor SiC power device factory that sources 100% of its electricity from…
The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.
This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility…
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) into…
By implementing Efficient Power Conversion’s (EPC) Gallium-Nitride (GaN) transistors, BrightLoop Converters’ DC-DC…
By implementing Efficient Power Conversion’s (EPC) Gallium-Nitride (GaN) transistors, BrightLoop Converters’ DC-DC Buck Converter looks to…
Power electronics manufacturer Navitas Semiconductor and Dell Technologies have partnered on the development of new…
Power electronics manufacturer Navitas Semiconductor and Dell Technologies have partnered on the development of new gallium nitride (GaN)…
The two companies are partnering to develop renewable energy solutions for STMicroelectronics’ manufacturing and design…
The two companies are partnering to develop renewable energy solutions for STMicroelectronics’ manufacturing and design facilities.
This article highlights STMicroelectronics’ MasterGaN® platform, in which MasterGaN2 is the first in the new family…
This article highlights STMicroelectronics’ MasterGaN® platform, in which MasterGaN2 is the first in the new family to contain two asymmetric…
Japanese power electronics firm Yaskawa Electric Corporation will invest $4 million in California-based GaN-based power…
Japanese power electronics firm Yaskawa Electric Corporation will invest $4 million in California-based GaN-based power conversion product provider…
This article discusses the demands of different applications, highlights the MITSUBISHI ELECTRIC SiC power devices…
This article discusses the demands of different applications, highlights the MITSUBISHI ELECTRIC SiC power devices available in different voltage…
Philips and GaN Systems have created a new fast-charging, gallium nitride (GaN), power charger that is able to withstand…
Philips and GaN Systems have created a new fast-charging, gallium nitride (GaN), power charger that is able to withstand 650V operating voltage…
The two companies recently held an opening ceremony to celebrate their new joint laboratory for SiC power devices.
The two companies recently held an opening ceremony to celebrate their new joint laboratory for SiC power devices.
Facebook
Google
GitHub
Linkedin