Latest Wide Bandgap Articles

Cambridge GaN Devices receive substantial funding to expand its GaN-based product portfolio and double its staff.

Cambridge GaN Devices receive substantial funding to expand its GaN-based product portfolio and double its staff.

The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of…

The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…

The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications

The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications

The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and…

The new module meets the needs for high-efficiency, compact equipment for industrial applications such as converters and inverters for railway…

The organizers of the leading global event for the power electronics community, PCIM Europe, take the in-person event…

The organizers of the leading global event for the power electronics community, PCIM Europe, take the in-person event online for the second year…

Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.

Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.

This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which…

This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…

German semiconductor giant Infineon will host a virtual Wide-Bandgap Developer Forum on March 11. Here’s what attendees…

German semiconductor giant Infineon will host a virtual Wide-Bandgap Developer Forum on March 11. Here’s what attendees can expect.

This article is the first in a series of articles discussing three topics that can help power systems designers achieve…

This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…

The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon

The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon

The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into…

The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into the medium-voltage grid.

This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs…

This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs and Superjunction FETs in…

Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the…

Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the railway market.

A team of researchers led by researcher Liwen Sang has developed a microelectromechanical systems (MEMS) resonator…

A team of researchers led by researcher Liwen Sang has developed a microelectromechanical systems (MEMS) resonator capable of stable operation in…

This article highlights Chang Sung Corporation upgraded High Flux Core called HIGH FLUX TITANIUM Series (GT Grade) that…

This article highlights Chang Sung Corporation upgraded High Flux Core called HIGH FLUX TITANIUM Series (GT Grade) that is specialized in server…

ROHM Semiconductor recently wrapped up construction on a new five-floor SiC power device factory that sources 100% of its…

ROHM Semiconductor recently wrapped up construction on a new five-floor SiC power device factory that sources 100% of its electricity from…

The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively

The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively

This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.

This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.

MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility…

MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) into…