A team of researchers led by researcher Liwen Sang has developed a microelectromechanical systems (MEMS) resonator capable of stable operation in…
A team of researchers led by researcher Liwen Sang has developed a microelectromechanical systems (MEMS) resonator capable of stable operation in…
This article highlights Chang Sung Corporation upgraded High Flux Core called HIGH FLUX TITANIUM Series (GT Grade) that…
This article highlights Chang Sung Corporation upgraded High Flux Core called HIGH FLUX TITANIUM Series (GT Grade) that is specialized in server…
ROHM Semiconductor recently wrapped up construction on a new five-floor SiC power device factory that sources 100% of its…
ROHM Semiconductor recently wrapped up construction on a new five-floor SiC power device factory that sources 100% of its electricity from…
The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
The GS-EVB-HB-66508B-RN and the GS-EVB-HB-66516T-RN are half bridge daughter cards that can handle 3kW and 6kW, respectively
This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.
This article discusses practical considerations for the measurement and extraction of dynamic power semiconductor parameters.
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility…
MinDCet has implemented GaN Systems’ enhancement-mode, (e-mode) gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) into…
By implementing Efficient Power Conversion’s (EPC) Gallium-Nitride (GaN) transistors, BrightLoop Converters’ DC-DC…
By implementing Efficient Power Conversion’s (EPC) Gallium-Nitride (GaN) transistors, BrightLoop Converters’ DC-DC Buck Converter looks to…
Power electronics manufacturer Navitas Semiconductor and Dell Technologies have partnered on the development of new…
Power electronics manufacturer Navitas Semiconductor and Dell Technologies have partnered on the development of new gallium nitride (GaN)…
The two companies are partnering to develop renewable energy solutions for STMicroelectronics’ manufacturing and design…
The two companies are partnering to develop renewable energy solutions for STMicroelectronics’ manufacturing and design facilities.
This article highlights STMicroelectronics’ MasterGaN® platform, in which MasterGaN2 is the first in the new family…
This article highlights STMicroelectronics’ MasterGaN® platform, in which MasterGaN2 is the first in the new family to contain two asymmetric…
Japanese power electronics firm Yaskawa Electric Corporation will invest $4 million in California-based GaN-based power…
Japanese power electronics firm Yaskawa Electric Corporation will invest $4 million in California-based GaN-based power conversion product provider…
This article discusses the demands of different applications, highlights the MITSUBISHI ELECTRIC SiC power devices…
This article discusses the demands of different applications, highlights the MITSUBISHI ELECTRIC SiC power devices available in different voltage…
Philips and GaN Systems have created a new fast-charging, gallium nitride (GaN), power charger that is able to withstand…
Philips and GaN Systems have created a new fast-charging, gallium nitride (GaN), power charger that is able to withstand 650V operating voltage…
The two companies recently held an opening ceremony to celebrate their new joint laboratory for SiC power devices.
The two companies recently held an opening ceremony to celebrate their new joint laboratory for SiC power devices.
This article introduces conventional isolated gate driver technology, including discrete transformer, opto-isolated, and…
This article introduces conventional isolated gate driver technology, including discrete transformer, opto-isolated, and capacitive methods, though…
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
GaN Systems, a leading manufacturer of Gallium Nitride-based power conversion devices, released a series of predictions…
GaN Systems, a leading manufacturer of Gallium Nitride-based power conversion devices, released a series of predictions set to define the power…
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V…
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V devices, such as speakers, TVs,…
This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN…
This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN gate driver and two GaN…
The PA is internally matched and requires no additional external RF components, enabling designers and system integrators…
The PA is internally matched and requires no additional external RF components, enabling designers and system integrators to maximize design by…
Facebook
Google
GitHub
Linkedin