This article introduces conventional isolated gate driver technology, including discrete transformer, opto-isolated, and capacitive methods, though…
This article introduces conventional isolated gate driver technology, including discrete transformer, opto-isolated, and capacitive methods, though…
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.
GaN Systems, a leading manufacturer of Gallium Nitride-based power conversion devices, released a series of predictions…
GaN Systems, a leading manufacturer of Gallium Nitride-based power conversion devices, released a series of predictions set to define the power…
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V…
Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V devices, such as speakers, TVs,…
This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN…
This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN gate driver and two GaN…
The PA is internally matched and requires no additional external RF components, enabling designers and system integrators…
The PA is internally matched and requires no additional external RF components, enabling designers and system integrators to maximize design by…
The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration…
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
This article provides an example of the benefits of integrated GaN power ICs via the introduction of an integrated FET…
This article provides an example of the benefits of integrated GaN power ICs via the introduction of an integrated FET and gate driver IC.
German semiconductor manufacturer, Infineon, signed an agreement with GT Advanced Technologies (GTAT) last week for the…
German semiconductor manufacturer, Infineon, signed an agreement with GT Advanced Technologies (GTAT) last week for the supply of silicon carbide…
The partnership between Microchip and Efficient Power Conversion (EPC) has yielded two 250W, 48V DC-DC solutions for…
The partnership between Microchip and Efficient Power Conversion (EPC) has yielded two 250W, 48V DC-DC solutions for ultra-thin laptops, displays,…
Researchers from the University of Surrey developed a unique transistor that could provide greater design freedom and…
Researchers from the University of Surrey developed a unique transistor that could provide greater design freedom and simplified circuitry for…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active power management, and…
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
This article highlights Keysight Technologies that overcome the challenges associated with GaN FET dynamic characterization.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.
GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.
GaN Systems’ New study illustrates how Gallium Nitride (GaN) stacks up against classical MOSFETs in real-world situations.
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for…
Tektronix’s new testing platform targets gallium nitride (GaN) and silicon carbide (SiC) based devices to design for fast switching, wide…
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
GaN Systems' GS-065-060-5-T-A is designed to meet automotive reliability standards including AEC-Q101 qualifications.
Facebook
Google
GitHub
Linkedin