Latest Wide Bandgap Articles

Power electronics manufacturer Navitas Semiconductor and Dell Technologies have partnered on the development of new…

Power electronics manufacturer Navitas Semiconductor and Dell Technologies have partnered on the development of new gallium nitride (GaN)…

The two companies are partnering to develop renewable energy solutions for STMicroelectronics’ manufacturing and design…

The two companies are partnering to develop renewable energy solutions for STMicroelectronics’ manufacturing and design facilities.

This article highlights STMicroelectronics’ MasterGaN® platform, in which MasterGaN2 is the first in the new family…

This article highlights STMicroelectronics’ MasterGaN® platform, in which MasterGaN2 is the first in the new family to contain two asymmetric…

Japanese power electronics firm Yaskawa Electric Corporation will invest $4 million in California-based GaN-based power…

Japanese power electronics firm Yaskawa Electric Corporation will invest $4 million in California-based GaN-based power conversion product provider…

This article discusses the demands of different applications, highlights the MITSUBISHI ELECTRIC SiC power devices…

This article discusses the demands of different applications, highlights the MITSUBISHI ELECTRIC SiC power devices available in different voltage…

Philips and GaN Systems have created a new fast-charging, gallium nitride (GaN), power charger that is able to withstand…

Philips and GaN Systems have created a new fast-charging, gallium nitride (GaN), power charger that is able to withstand 650V operating voltage…

The two companies recently held an opening ceremony to celebrate their new joint laboratory for SiC power devices.

The two companies recently held an opening ceremony to celebrate their new joint laboratory for SiC power devices.

This article introduces conventional isolated gate driver technology, including discrete transformer, opto-isolated, and…

This article introduces conventional isolated gate driver technology, including discrete transformer, opto-isolated, and capacitive methods, though…

Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.

Available in EP7 packages, the new units feature an input voltage range from 9 to 36 volts, with a saturation current of 4.5 amps.

GaN Systems, a leading manufacturer of Gallium Nitride-based power conversion devices, released a series of predictions…

GaN Systems, a leading manufacturer of Gallium Nitride-based power conversion devices, released a series of predictions set to define the power…

Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V…

Performance tests show it can charge three digital devices simultaneously while also supplying power to three 220V devices, such as speakers, TVs,…

This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN…

This article highlights MinDCet GaN-based Half-Bridge Evaluation kit (MDC901-EVKHB), based on the MinDCet MDC901 GaN gate driver and two GaN…

The PA is internally matched and requires no additional external RF components, enabling designers and system integrators…

The PA is internally matched and requires no additional external RF components, enabling designers and system integrators to maximize design by…

The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors

The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors

GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration…

GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor.

UnitedSiC’s gen 4 technology enables enhanced figures of merit.

UnitedSiC’s gen 4 technology enables enhanced figures of merit.

Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.

Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.

This article provides an example of the benefits of integrated GaN power ICs via the introduction of an integrated FET…

This article provides an example of the benefits of integrated GaN power ICs via the introduction of an integrated FET and gate driver IC.

German semiconductor manufacturer, Infineon, signed an agreement with GT Advanced Technologies (GTAT) last week for the…

German semiconductor manufacturer, Infineon, signed an agreement with GT Advanced Technologies (GTAT) last week for the supply of silicon carbide…