EPC’s CEO and Co-Founder Alex Lidow talks about GaN's biggest application areas and how GaN is in it for the long haul.
EPC’s CEO and Co-Founder Alex Lidow talks about GaN's biggest application areas and how GaN is in it for the long haul.
ROHM’s BM2SC12xFP2-LBZ power ICs are the Quasi-resonant (QR) AC/DC converters with an integrated 1700V SiC MOSFET in a…
ROHM’s BM2SC12xFP2-LBZ power ICs are the Quasi-resonant (QR) AC/DC converters with an integrated 1700V SiC MOSFET in a single compact…
A German semiconductor manufacturer selects Oxford Instruments Plasma Technology’s PlasmaPro 100 ALE solution for…
A German semiconductor manufacturer selects Oxford Instruments Plasma Technology’s PlasmaPro 100 ALE solution for creating gallium nitride-based…
In this article, a discussion is given about testing and related results of Silicon-carbide power MOSFETs for automotive…
In this article, a discussion is given about testing and related results of Silicon-carbide power MOSFETs for automotive applications. It reports…
With competing devices spec’d at 6 volts, ROHM’s devices will offer the designer a critical 2-volt edge.
With competing devices spec’d at 6 volts, ROHM’s devices will offer the designer a critical 2-volt edge.
The Si2 Compact Model Coalition (CMC) has announced it will fund and help institute the standardization of a SPICE model…
The Si2 Compact Model Coalition (CMC) has announced it will fund and help institute the standardization of a SPICE model for silicon carbide MOSFETs.
This article highlights GeneSiC Semiconductor 750V G3R™SiC MOSFETs that deliver unprecedented levels of performance,…
This article highlights GeneSiC Semiconductor 750V G3R™SiC MOSFETs that deliver unprecedented levels of performance, robustness and quality that…
One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its…
One popular GaN device type is the Cascode GaN FET, which provides even more difficult challenges with its oscillation-prone device behavior. In…
The Fraunhofer Institute for Reliability and Microintegration (Fraunhofer IZM) in Berlin has announced a new project…
The Fraunhofer Institute for Reliability and Microintegration (Fraunhofer IZM) in Berlin has announced a new project aimed at increasing the range…
The HybridPACK Drive CoolSiC is a full-bridge module with a 1200-volt blocking voltage aimed at EV traction inverters
The HybridPACK Drive CoolSiC is a full-bridge module with a 1200-volt blocking voltage aimed at EV traction inverters
When it comes to designing power converters, wide bandgap (WBG) technologies such as silicon carbide (SiC) are now a…
When it comes to designing power converters, wide bandgap (WBG) technologies such as silicon carbide (SiC) are now a realistic option during…
The new transistor was developed for demanding high-power electric vehicle applications such as onboard chargers,…
The new transistor was developed for demanding high-power electric vehicle applications such as onboard chargers, traction inverters, and DC-DC…
APEC 2021 will be held virtually over four days in June. Here’s a preview of the popular annual power industry conference.
APEC 2021 will be held virtually over four days in June. Here’s a preview of the popular annual power industry conference.
The resulting open frame, 65W USB-C PD charger unites Silana’s PWM controller with Transphorm’s SuperGaN FETs
The resulting open frame, 65W USB-C PD charger unites Silana’s PWM controller with Transphorm’s SuperGaN FETs
This 48/12 VDC solution’s 97% efficiency allows for air cooling, making water cooling unnecessary
This 48/12 VDC solution’s 97% efficiency allows for air cooling, making water cooling unnecessary
Future Medium Voltage Power Electronics solutions for measurement and control require a new approach that increases…
Future Medium Voltage Power Electronics solutions for measurement and control require a new approach that increases simplicity, reliability and…
Advances in GaN operating voltages have made the wide bandgap technology more relevant than ever to EV manufacturers
Advances in GaN operating voltages have made the wide bandgap technology more relevant than ever to EV manufacturers
Navitas Semiconductor, a GaN power IC provider, is set to go public in a special purpose acquisition company (SPAC) deal…
Navitas Semiconductor, a GaN power IC provider, is set to go public in a special purpose acquisition company (SPAC) deal valued at over $1 billion.
This article highlights United Silicon Carbide FET 650V and 1200V options, all housed in the industry standard D2PAK-7L…
This article highlights United Silicon Carbide FET 650V and 1200V options, all housed in the industry standard D2PAK-7L surface mount package.
Infineon concluded a supply contract with Japanese wafer manufacturer Showa Denko, which offers high-demand silicon…
Infineon concluded a supply contract with Japanese wafer manufacturer Showa Denko, which offers high-demand silicon carbide (SiC) material.
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