Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very…
Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very…
The new devices utilize ROHM’s Schottky SBDs as a freewheeling diode to effect minimal switching power losses
The new devices utilize ROHM’s Schottky SBDs as a freewheeling diode to effect minimal switching power losses
EPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion…
EPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical…
Today’s energy-efficient electric charging systems powering commercial vehicle propulsion, as well as auxiliary power…
Today’s energy-efficient electric charging systems powering commercial vehicle propulsion, as well as auxiliary power systems, solar inverters,…
The Fraunhofer Institute for Applied Solid State Physics (IAF), explored new research through their latest ideas for…
The Fraunhofer Institute for Applied Solid State Physics (IAF), explored new research through their latest ideas for integrating GaN-based ICs for…
Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC…
Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm…
This article highlights 3-5 Power Electronics Silicon feature dynamic switching characteristics similar to Silicon…
This article highlights 3-5 Power Electronics Silicon feature dynamic switching characteristics similar to Silicon Carbide (SiC) to give excellent…
NXP Semiconductors has integrated Gallium Nitride (GaN) technology into its 5G multi-chip module platform.
NXP Semiconductors has integrated Gallium Nitride (GaN) technology into its 5G multi-chip module platform.
Learn about the principles of and the operation of the field-effect transistor.
Learn about the principles of and the operation of the field-effect transistor.
The new monolithic microwave integrated Circuit (MMIC) delivers 10W of saturated RF output power over a 27.5 to 31GHz range
The new monolithic microwave integrated Circuit (MMIC) delivers 10W of saturated RF output power over a 27.5 to 31GHz range
This article highlights EPC discrete eGaN FETs and Integrated Circuit ePower™ stages.
This article highlights EPC discrete eGaN FETs and Integrated Circuit ePower™ stages.
The surface mounted units are housed in TO 263-7L package and deliver up to 48 watts with no heatsink required
The surface mounted units are housed in TO 263-7L package and deliver up to 48 watts with no heatsink required
Cree announces its partnership with Gospower which focuses on the development of silicon-carbide-based power supply…
Cree announces its partnership with Gospower which focuses on the development of silicon-carbide-based power supply solutions for boosting…
The continuing trend towards more efficient energy consumption in motor drives has led to a wide offering of devices for…
The continuing trend towards more efficient energy consumption in motor drives has led to a wide offering of devices for the power stage of…
EPC’s CEO and Co-Founder Alex Lidow talks about GaN's biggest application areas and how GaN is in it for the long haul.
EPC’s CEO and Co-Founder Alex Lidow talks about GaN's biggest application areas and how GaN is in it for the long haul.
ROHM’s BM2SC12xFP2-LBZ power ICs are the Quasi-resonant (QR) AC/DC converters with an integrated 1700V SiC MOSFET in a…
ROHM’s BM2SC12xFP2-LBZ power ICs are the Quasi-resonant (QR) AC/DC converters with an integrated 1700V SiC MOSFET in a single compact…
A German semiconductor manufacturer selects Oxford Instruments Plasma Technology’s PlasmaPro 100 ALE solution for…
A German semiconductor manufacturer selects Oxford Instruments Plasma Technology’s PlasmaPro 100 ALE solution for creating gallium nitride-based…
In this article, a discussion is given about testing and related results of Silicon-carbide power MOSFETs for automotive…
In this article, a discussion is given about testing and related results of Silicon-carbide power MOSFETs for automotive applications. It reports…
With competing devices spec’d at 6 volts, ROHM’s devices will offer the designer a critical 2-volt edge.
With competing devices spec’d at 6 volts, ROHM’s devices will offer the designer a critical 2-volt edge.
The Si2 Compact Model Coalition (CMC) has announced it will fund and help institute the standardization of a SPICE model…
The Si2 Compact Model Coalition (CMC) has announced it will fund and help institute the standardization of a SPICE model for silicon carbide MOSFETs.
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