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What to Expect at APEC 2021

What to Expect at APEC 2021

APEC 2021 will be held virtually over four days in June. Here’s a preview of the popular annual power industry conference.


News May 27, 2021 by Shannon Cuthrell
Transphorm and Silana Partner on GaN Adapter Reference Design

Transphorm and Silana Partner on GaN Adapter Reference Design

The resulting open frame, 65W USB-C PD charger unites Silana’s PWM controller with Transphorm’s SuperGaN FETs


EPC Debuts GaN-Based, Bidirectional 1.5kW Demonstration Board

EPC Debuts GaN-Based, Bidirectional 1.5kW Demonstration Board

This 48/12 VDC solution’s 97% efficiency allows for air cooling, making water cooling unnecessary


Self-Powered Modules for Measurement and Control in Medium Voltage Power Electronics

Self-Powered Modules for Measurement and Control in Medium Voltage Power Electronics

Future Medium Voltage Power Electronics solutions for measurement and control require a new approach that increases simplicity, reliability and…


Keysight Debuts a GaN Test Board for its PD1500A Testing System

Keysight Debuts a GaN Test Board for its PD1500A Testing System

Advances in GaN operating voltages have made the wide bandgap technology more relevant than ever to EV manufacturers


Navitas Semiconductor to go Public Through SPAC Merger

Navitas Semiconductor to go Public Through SPAC Merger

Navitas Semiconductor, a GaN power IC provider, is set to go public in a special purpose acquisition company (SPAC) deal valued at over $1 billion.


News May 20, 2021 by Shannon Cuthrell
UnitedSiC Announces Six New D2PAK-7L SiC FETs

UnitedSiC Announces Six New D2PAK-7L SiC FETs

This article highlights United Silicon Carbide FET 650V and 1200V options, all housed in the industry standard D2PAK-7L surface mount package.


Infineon Expands SiC Supplier Base

Infineon Expands SiC Supplier Base

Infineon concluded a supply contract with Japanese wafer manufacturer Showa Denko, which offers high-demand silicon carbide (SiC) material.


News May 19, 2021 by Shannon Cuthrell
GaN Systems Unveils a 3kW LLC Resonant Converter Reference Design

GaN Systems Unveils a 3kW LLC Resonant Converter Reference Design

The full-bridge reference design meets and beats the 80 Plus Titanium standard for switch mode power supplies (SMPS)


STMicroelectronics Unveils its STi2GaN Portfolio

STMicroelectronics Unveils its STi2GaN Portfolio

GaN power stages are combined with intelligence to create highly efficient, space saving solutions


CISSOID Expands its SiC Intelligent Power Modules Platform

CISSOID Expands its SiC Intelligent Power Modules Platform

The liquid-cooled modules are ideal for E-Mobility applications and meet the demand for natural cooling in aerospace.


EPC Launches Scalable 1.5 kW 48 V/12 V DC-DC Demonstration Board Powered by GaN FETs

EPC Launches Scalable 1.5 kW 48 V/12 V DC-DC Demonstration Board Powered by GaN FETs

The design of this demonstration board is scalable; that is, two converters can be paralleled to achieve 3 kW or three converters can be paralleled…


Nexperia’s 650V GaN FETs Sport RDS(ON)s of 33 Milliohms

Nexperia’s 650V GaN FETs Sport RDS(ON)s of 33 Milliohms

The new devices will enable power supplies functioning at 2 kW and higher to satisfy the 80 PLUS Titanium standard


Kassiopeia Project Aims to Create Spaceborne Devices with an Emphasis on Power Electronics

Kassiopeia Project Aims to Create Spaceborne Devices with an Emphasis on Power Electronics

Ferdinand-Braun-Institut (FBH), SweGaN AB, and the University of Bristol are partnering to design and manufacture new spaceborne devices.


CISSOID Augments its Platform of 3-Phase SiC MOSFET IPMs

CISSOID Augments its Platform of 3-Phase SiC MOSFET IPMs

The expanded portfolio of intelligent power modules (IPM) includes two liquid cooled devices


News May 05, 2021 by Gary Elinoff
ON Semiconductor Announces New Generations of SUPERFET MOSFETs and SiC Diodes

ON Semiconductor Announces New Generations of SUPERFET MOSFETs and SiC Diodes

How SiC MOSFETS are Made and How They Work Best

How SiC MOSFETS are Made and How They Work Best

This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.


II-VI Expands Global SiC Production to Meet Market Demand

II-VI Expands Global SiC Production to Meet Market Demand

II-VI establishes its new backend processing line for conductive SiC substrates in Fuzhou, China.


News Apr 29, 2021 by Stephanie Leonida
Infineon Virtual Power Conference

Infineon Virtual Power Conference

Infineon’s Virtual Power Conference, held May 4–6, will feature live expert panels and product demos showcasing the company’s latest energy…


News Apr 28, 2021 by Shannon Cuthrell
STMicroelectronics Debuts MasterGaN4 for 200W Power Applications

STMicroelectronics Debuts MasterGaN4 for 200W Power Applications

The new power package integrates two 650V GaN power transistors with optimized gate drivers and circuit protection.