EEPower

Latest Wide Bandgap Articles

Categories

GaN Systems Unveils a 3kW LLC Resonant Converter Reference Design

GaN Systems Unveils a 3kW LLC Resonant Converter Reference Design

The full-bridge reference design meets and beats the 80 Plus Titanium standard for switch mode power supplies (SMPS)


STMicroelectronics Unveils its STi2GaN Portfolio

STMicroelectronics Unveils its STi2GaN Portfolio

GaN power stages are combined with intelligence to create highly efficient, space saving solutions


CISSOID Expands its SiC Intelligent Power Modules Platform

CISSOID Expands its SiC Intelligent Power Modules Platform

The liquid-cooled modules are ideal for E-Mobility applications and meet the demand for natural cooling in aerospace.


EPC Launches Scalable 1.5 kW 48 V/12 V DC-DC Demonstration Board Powered by GaN FETs

EPC Launches Scalable 1.5 kW 48 V/12 V DC-DC Demonstration Board Powered by GaN FETs

The design of this demonstration board is scalable; that is, two converters can be paralleled to achieve 3 kW or three converters can be paralleled…


Nexperia’s 650V GaN FETs Sport RDS(ON)s of 33 Milliohms

Nexperia’s 650V GaN FETs Sport RDS(ON)s of 33 Milliohms

The new devices will enable power supplies functioning at 2 kW and higher to satisfy the 80 PLUS Titanium standard


Kassiopeia Project Aims to Create Spaceborne Devices with an Emphasis on Power Electronics

Kassiopeia Project Aims to Create Spaceborne Devices with an Emphasis on Power Electronics

Ferdinand-Braun-Institut (FBH), SweGaN AB, and the University of Bristol are partnering to design and manufacture new spaceborne devices.


CISSOID Augments its Platform of 3-Phase SiC MOSFET IPMs

CISSOID Augments its Platform of 3-Phase SiC MOSFET IPMs

The expanded portfolio of intelligent power modules (IPM) includes two liquid cooled devices


News May 05, 2021 by Gary Elinoff
ON Semiconductor Announces New Generations of SUPERFET MOSFETs and SiC Diodes

ON Semiconductor Announces New Generations of SUPERFET MOSFETs and SiC Diodes

How SiC MOSFETS are Made and How They Work Best

How SiC MOSFETS are Made and How They Work Best

This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.


II-VI Expands Global SiC Production to Meet Market Demand

II-VI Expands Global SiC Production to Meet Market Demand

II-VI establishes its new backend processing line for conductive SiC substrates in Fuzhou, China.


News Apr 29, 2021 by Stephanie Leonida
Infineon Virtual Power Conference

Infineon Virtual Power Conference

Infineon’s Virtual Power Conference, held May 4–6, will feature live expert panels and product demos showcasing the company’s latest energy…


News Apr 28, 2021 by Shannon Cuthrell
STMicroelectronics Debuts MasterGaN4 for 200W Power Applications

STMicroelectronics Debuts MasterGaN4 for 200W Power Applications

The new power package integrates two 650V GaN power transistors with optimized gate drivers and circuit protection.


Digital DC/DC Converter Delivers 1300W for RF Power Amplifier Applications

Digital DC/DC Converter Delivers 1300W for RF Power Amplifier Applications

This article highlights Flex  BMR685’s power-handling capabilities make it well-suited to these high-power RF Power Amplifier applications, for…


Researchers Explore Carbon Impurities in Gallium Nitride Semiconductors

Researchers Explore Carbon Impurities in Gallium Nitride Semiconductors

Scientists from the Nagoya Institute of Technology (NITech) have conducted innovative research about the role of impurities in Gallium Nitride…


Nexperia Announces New GaN Technology Partnership for EV Development

Nexperia Announces New GaN Technology Partnership for EV Development

Dutch semiconductor manufacturer Nexperia teams up with China’s United Automotive Electronic Systems Co. on a new program to develop GaN-based…


News Apr 24, 2021 by Shannon Cuthrell
Marelli to Begin Manufacturing New Full SiC Power Modules for Motorsport Applications

Marelli to Begin Manufacturing New Full SiC Power Modules for Motorsport Applications

Italian automotive manufacturer Marelli has announced the launch of a new line of power modules with a 99.5% efficiency rate for motorsport,…


United SiC’s New FET-Jet Tool to Help Engineers Select the Right Device for Their Designs

United SiC’s New FET-Jet Tool to Help Engineers Select the Right Device for Their Designs

UnitedSiC brings power systems engineers a new, registration-free tool that can help with quick decision-making when constructing power designs.


News Apr 17, 2021 by Stephanie Leonida
Swansea University and Newport Wafer Fab Awarded New Funding for Manufacture of SiC Substrates

Swansea University and Newport Wafer Fab Awarded New Funding for Manufacture of SiC Substrates

Swansea University and Newport Wafer Fab receive government funds to help lead the UK toward net-zero carbon emission goals and clean up technology…


News Apr 15, 2021 by Stephanie Leonida
STMicroelectronics’ New Isolated Gate Driver is Aimed At SiC MOSFETS

STMicroelectronics’ New Isolated Gate Driver is Aimed At SiC MOSFETS

The new driver delivers gate-driving voltages of up to 26 volts and operates from a high-voltage rail up to 1200V


The Demand for Seamless Characterization, Simulation and Development of Power Semiconductors

The Demand for Seamless Characterization, Simulation and Development of Power Semiconductors

This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet to support the setup of…