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Graphene Flagship Develops Method for Graphene Integration into Silicon Wafers

Graphene Flagship Develops Method for Graphene Integration into Silicon Wafers

The Graphene Flagship’s industry and academic partners combined their knowledge and expertise to integrate high-quality graphene into silicon…


News Feb 26, 2021 by Stephanie Leonida
Navitas Semiconductor Debuts 650V GaN Power IC With a 70mΩ RDS(ON)

Navitas Semiconductor Debuts 650V GaN Power IC With a 70mΩ RDS(ON)

Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.


Embedded World to Host a Wide Array of Power Technologies

Embedded World to Host a Wide Array of Power Technologies

Embedded World 2021 is only a week away. Here’s an overview of what many companies will showcase.


1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

1200V Discrete SiC MOSFETs Compared to High-Speed 3 IGBTs for Servo-Drive Systems

This article highlights Infineon Technologies AG CoolSiC™ MOSFET performance that are for servo-drive systems, which are typically characterized…


Nexperia Extends LFPAK56D MOSFET Line-up with AEC-Q101-qualified Half-bridge Package

Nexperia Extends LFPAK56D MOSFET Line-up with AEC-Q101-qualified Half-bridge Package

The half-bridge configuration of two MOSFETS is a standard building block for many automotive applications including motor drives and DC/DC…


Infineon to Host Online Industrial WBG Developer Forum

Infineon to Host Online Industrial WBG Developer Forum

German semiconductor giant Infineon will host a virtual Wide-Bandgap Developer Forum on March 11. Here’s what attendees can expect.


News Feb 22, 2021 by Shannon Cuthrell
Layout Considerations for GaN Transistor Circuits

Layout Considerations for GaN Transistor Circuits

This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…


EPC and Renesas Introduce a Demo Board Showcasing GaN Technology

EPC and Renesas Introduce a Demo Board Showcasing GaN Technology

The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon


Digilent Announces its 3000 Series Oscilloscope Family

Digilent Announces its 3000 Series Oscilloscope Family

The new units feature either four or two channels with 14-bit resolution at up to 0.5 GS/s and 16 digital channels


Fraunhofer ISE Creates Compact Inverters for Direct Connection to Medium-Voltage Grids

Fraunhofer ISE Creates Compact Inverters for Direct Connection to Medium-Voltage Grids

The Fraunhofer Institute for Solar Energy Systems (ISE) has developed a highly compact inverter for direct feeding into the medium-voltage grid.


Enabling Higher Efficiency Power Designs with 750V Gen 4 SiC FETs

Enabling Higher Efficiency Power Designs with 750V Gen 4 SiC FETs

This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs and Superjunction FETs in…


Alpha And Omega Semiconductor Unveils USB-C Power Delivery Source Protection Switch

Alpha And Omega Semiconductor Unveils USB-C Power Delivery Source Protection Switch

The tiny new smart protection switch operates over a 3.4 to 23-volt range and features a 36mΩ ON-Resistance


Renesas Agrees to Buy Power Management Company Dialog Semiconductor

Renesas Agrees to Buy Power Management Company Dialog Semiconductor

Japanese semiconductor giant Renesas is acquiring U.K.-based integrated circuit provider Dialog Semiconductor for nearly $6 billion.


News Feb 10, 2021 by Shannon Cuthrell
IGBT Module Contributes to Energy Saving in Railway Transportation

IGBT Module Contributes to Energy Saving in Railway Transportation

Fuji Electric has started mass production of its HPnC module outfitted with a 7th generation X-Series IGBT, targeting the railway market.


Infineon’s New 650 V CoolSiC™ Hybrid IGBT Discrete Family Offers High Efficiency

Infineon’s New 650 V CoolSiC™ Hybrid IGBT Discrete Family Offers High Efficiency

This article highlights Infineon Technologies AG 650 V CoolSiC™ Hybrid IGBT portfolio in a discrete package with 650 V blocking voltage.


JST PRESTO Researcher Develops GaN-based Mems Resonator

JST PRESTO Researcher Develops GaN-based Mems Resonator

A team of researchers led by researcher Liwen Sang has developed a microelectromechanical systems (MEMS) resonator capable of stable operation in…


Efficient Power Conversion’s New 40V eGaN FET Sports an RDS(ON) of only 3 mΩ

Efficient Power Conversion’s New 40V eGaN FET Sports an RDS(ON) of only 3 mΩ

The new semiconductor is aimed at ultra-thin Point-of-Load Converters, USB-C Battery Chargers and other space-constrained applications


High Flux Titanium Series (GT Grade)

High Flux Titanium Series (GT Grade)

This article highlights Chang Sung Corporation upgraded High Flux Core called HIGH FLUX TITANIUM Series (GT Grade) that is specialized in server…


ROHM Opens Renewable Energy-Powered Production Building

ROHM Opens Renewable Energy-Powered Production Building

ROHM Semiconductor recently wrapped up construction on a new five-floor SiC power device factory that sources 100% of its electricity from…


News Feb 02, 2021 by Shannon Cuthrell
Monolithic Power Systems Unveils a Series of 48V to 6V LLC Modules

Monolithic Power Systems Unveils a Series of 48V to 6V LLC Modules

Based on Efficient Power Conversion’s EGaN FETs, the non-isolated DC/DC power modules provide up to 300 watts of output power.