EPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical…
EPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical…
Nexperia has announced that its semiconductor equipment manufacturing division ITEC is launching as a separate independent entity.
Nexperia has announced that its semiconductor equipment manufacturing division ITEC is launching as a separate independent entity.
The unit features thermal battery protection and automatic selection of three charging modes: automatic trickle charge,…
The unit features thermal battery protection and automatic selection of three charging modes: automatic trickle charge, constant current, and…
Today’s energy-efficient electric charging systems powering commercial vehicle propulsion, as well as auxiliary power…
Today’s energy-efficient electric charging systems powering commercial vehicle propulsion, as well as auxiliary power systems, solar inverters,…
Cirrus Logic announces its agreement to acquire Lion Semiconductor to grow its mixed-signal business.
Cirrus Logic announces its agreement to acquire Lion Semiconductor to grow its mixed-signal business.
The Fraunhofer Institute for Applied Solid State Physics (IAF), explored new research through their latest ideas for…
The Fraunhofer Institute for Applied Solid State Physics (IAF), explored new research through their latest ideas for integrating GaN-based ICs for…
The peak current is one of the most important parameters in gate driver datasheets. Learn how to best find the peak…
The peak current is one of the most important parameters in gate driver datasheets. Learn how to best find the peak current of a gate driver with…
Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC…
Tagore Technology announces the introduction of the TP44200NM 650V Gallium Nitride Power FET with an integrated driver IC in a compact 22 pin, 5mm…
Continuing its recent moves to increase production capacity in Europe, Dutch semiconductor manufacturer Nexperia has…
Continuing its recent moves to increase production capacity in Europe, Dutch semiconductor manufacturer Nexperia has acquired 100% ownership of the…
Micro SMA packaged, 25ns, max. reverse recovery time diodes are AEC-Q101 qualified; 1A- and 2A-rated parts feature low…
Micro SMA packaged, 25ns, max. reverse recovery time diodes are AEC-Q101 qualified; 1A- and 2A-rated parts feature low reverse leakage, low reverse…
This article highlights 3-5 Power Electronics Silicon feature dynamic switching characteristics similar to Silicon…
This article highlights 3-5 Power Electronics Silicon feature dynamic switching characteristics similar to Silicon Carbide (SiC) to give excellent…
The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.
The new chipset will enable power supply units (PSU) of 100+ watts that are 30-50% smaller than those now available.
NXP Semiconductors has integrated Gallium Nitride (GaN) technology into its 5G multi-chip module platform.
NXP Semiconductors has integrated Gallium Nitride (GaN) technology into its 5G multi-chip module platform.
The new monolithic microwave integrated Circuit (MMIC) delivers 10W of saturated RF output power over a 27.5 to 31GHz range
The new monolithic microwave integrated Circuit (MMIC) delivers 10W of saturated RF output power over a 27.5 to 31GHz range
The demand for high power density converters in EVs requires further integration of sensors within power electronics.
The demand for high power density converters in EVs requires further integration of sensors within power electronics.
Researchers at the University of Bristol discovered a method to quantify electric fields with a semiconductor device…
Researchers at the University of Bristol discovered a method to quantify electric fields with a semiconductor device which would lead to the…
Both N-Channel devices feature a source-drain recovery charge (QRR) of zero and a very low total gate charge (QG).
Both N-Channel devices feature a source-drain recovery charge (QRR) of zero and a very low total gate charge (QG).
A semiconductor trade association and an automotive industry think tank team up for a supply chain partnership.
A semiconductor trade association and an automotive industry think tank team up for a supply chain partnership.
This article highlights EPC discrete eGaN FETs and Integrated Circuit ePower™ stages.
This article highlights EPC discrete eGaN FETs and Integrated Circuit ePower™ stages.
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