EEPower

Latest Power FETs Articles

Categories

How SiC MOSFETS are Made and How They Work Best

How SiC MOSFETS are Made and How They Work Best

This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.


United SiC’s New FET-Jet Tool to Help Engineers Select the Right Device for Their Designs

United SiC’s New FET-Jet Tool to Help Engineers Select the Right Device for Their Designs

UnitedSiC brings power systems engineers a new, registration-free tool that can help with quick decision-making when constructing power designs.


News Apr 17, 2021 by Stephanie Leonida
UnitedSiC Launches a New FET-Jet Calculator

UnitedSiC Launches a New FET-Jet Calculator

This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates selection and performance…


Eliminating EMC at the Source

Eliminating EMC at the Source

This article highlights Ing Buro Springett elimination of the source of the noise by replacing the mosfet with a source tabbed, Nexperia GAN063-650W.


Ricoh Electronics Devices Launches a 4-Channel, High-Voltage Window Voltage Detector

Ricoh Electronics Devices Launches a 4-Channel, High-Voltage Window Voltage Detector

For higher security, the R3500 series has a fault-diagnostic function that checks if the IC itself can operate properly, as the new product is…


Layout Considerations for GaN Transistor Circuits

Layout Considerations for GaN Transistor Circuits

This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their…


Enabling Higher Efficiency Power Designs with 750V Gen 4 SiC FETs

Enabling Higher Efficiency Power Designs with 750V Gen 4 SiC FETs

This article highlights eviewed the parameters of the new G4 UJ4C 750V SiC FETs from UnitedSiC compared to SiC MOSFETs and Superjunction FETs in…


Efficient Power Conversion’s New 40V eGaN FET Sports an RDS(ON) of only 3 mΩ

Efficient Power Conversion’s New 40V eGaN FET Sports an RDS(ON) of only 3 mΩ

The new semiconductor is aimed at ultra-thin Point-of-Load Converters, USB-C Battery Chargers and other space-constrained applications


How to Achieve Fast Switching with a High-Voltage Isolated Driver IC

How to Achieve Fast Switching with a High-Voltage Isolated Driver IC

In high switching frequency applications, the high commutation slopes of the power switches require immunity against high levels of common mode…


STMicroelectronics Unveils High Voltage Offline AC/DC Converter IC

STMicroelectronics Unveils High Voltage Offline AC/DC Converter IC

The new units are optimized for isolated and non-isolated buck, flyback, and buck-boost converters


Transphorm’s SuperGaN Gen 5 650V FET Targets EVs

Transphorm’s SuperGaN Gen 5 650V FET Targets EVs

Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in power, design flexibility, and…


EPC Launches 40 V eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters

EPC Launches 40 V eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters

EPC introduces the 40 V, 3 milliohm EPC2055 eGaN FET, offering designers a device that is smaller, more efficient, and more reliable than currently…


UnitedSiC Introduces Four 750V SiC FETS as Part of its Gen 4 SiC FET Platform

UnitedSiC Introduces Four 750V SiC FETS as Part of its Gen 4 SiC FET Platform

UnitedSiC’s gen 4 technology enables enhanced figures of merit.


EPC’s New eGaN FET is Aimed at 48V Synchronous Rectification Applications

EPC’s New eGaN FET is Aimed at 48V Synchronous Rectification Applications

The new unit leads the pack with greater reliability and efficiency at a lower cost point and at a smaller size


Mitsubishi Electric’s IGBT Module for High Power Industrial and Renewable Applications

Mitsubishi Electric’s IGBT Module for High Power Industrial and Renewable Applications

This article highlights Mitsubishi Electric Corporation LV100 T-series IGBT modules for industrial application that will be available for 1200V and…


Researchers Create a Unique Transistor Device based on Neural Function

Researchers Create a Unique Transistor Device based on Neural Function

Researchers from the University of Surrey developed a unique transistor that could provide greater design freedom and simplified circuitry for…


News Nov 13, 2020 by Stephanie Leonida
Quad-Output SIMO Power Management IC by Maxim Integrated Achieves High Power Density

Quad-Output SIMO Power Management IC by Maxim Integrated Achieves High Power Density

This article highlights Maxim Integrated MAX77655 single-inductor multiple output (SIMO) power management IC (PMIC) that provides the…


STMicro And Sanken Electric’s Partnership Yields 650V and 1200V IPMs For High-Voltage Designs

STMicro And Sanken Electric’s Partnership Yields 650V and 1200V IPMs For High-Voltage Designs

Through the partnership between STMicroelectronics (ST) and Sanken Electric, a new family of intelligent power modules (IPMs) to simplify HVAC…


EPC Launches 170 V eGaN FET

EPC Launches 170 V eGaN FET

This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable,…


Texas Instruments Introduces GaN FET Drivers for Automotive Applications

Texas Instruments Introduces GaN FET Drivers for Automotive Applications

Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active power management, and…