Latest Power FETs Articles

Researchers from the University of Surrey developed a unique transistor that could provide greater design freedom and…

Researchers from the University of Surrey developed a unique transistor that could provide greater design freedom and simplified circuitry for…

This article highlights Maxim Integrated MAX77655 single-inductor multiple output (SIMO) power management IC (PMIC)…

This article highlights Maxim Integrated MAX77655 single-inductor multiple output (SIMO) power management IC (PMIC) that provides the…

Through the partnership between STMicroelectronics (ST) and Sanken Electric, a new family of intelligent power modules…

Through the partnership between STMicroelectronics (ST) and Sanken Electric, a new family of intelligent power modules (IPMs) to simplify HVAC…

This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more…

This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable,…

Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active…

Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active power management, and…

This new generation of 100 V eGaN FETs are aimed at applications in lidar, infotainment, class D audio and 48-VOUT…

This new generation of 100 V eGaN FETs are aimed at applications in lidar, infotainment, class D audio and 48-VOUT synchronous rectification

Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds…

Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds and power handling…

EPC introduces new generation 100 V eGaN® FETs that are ideal for 48-VOUT synchronous rectification, class-D audio,…

EPC introduces new generation 100 V eGaN® FETs that are ideal for 48-VOUT synchronous rectification, class-D audio, infotainment, and lidar.

This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported…

This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported a typical ON-resistance of…

Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.

Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.

KEMET releases new tantalum polymer capacitors designed to provide the highest capacitance/voltage (CV) ratings in…

KEMET releases new tantalum polymer capacitors designed to provide the highest capacitance/voltage (CV) ratings in surface mount device (SMD)…

This article discusses WeEn Semiconductor's high voltage SCRs its applications and process technology.

This article discusses WeEn Semiconductor's high voltage SCRs its applications and process technology.

Power Integrations announced its LinkSwitch-TN2, a high-reliability, space-saving buck/flyback switcher ICs targeting 400…

Power Integrations announced its LinkSwitch-TN2, a high-reliability, space-saving buck/flyback switcher ICs targeting 400 VDC EV applications

With 3 materials and about 8 types of transistors to select from — although not all combinations are available — the…

With 3 materials and about 8 types of transistors to select from — although not all combinations are available — the choice of the optimum…

The grant was made by the "Driving the Electric Revolution Challenge" program, part of UKRI’s Industrial Strategy…

The grant was made by the "Driving the Electric Revolution Challenge" program, part of UKRI’s Industrial Strategy Challenge Fund.

Researchers at the University of Buffalo have developed a breakthrough in power electronics, a lateral gallium…

Researchers at the University of Buffalo have developed a breakthrough in power electronics, a lateral gallium oxide-based transistor that can…

Infineon Technologies launches the CoolSiC™ MOSFETs 1700Vs optimized for flyback topologies compatible with common PWM…

Infineon Technologies launches the CoolSiC™ MOSFETs 1700Vs optimized for flyback topologies compatible with common PWM controllers.

Scientists at NIST and UMD became the second group to construct a single-atom transistor. This month, the researchers…

Scientists at NIST and UMD became the second group to construct a single-atom transistor. This month, the researchers demonstrated how to precisely…