The new semiconductor is aimed at ultra-thin Point-of-Load Converters, USB-C Battery Chargers and other space-constrained applications
The new semiconductor is aimed at ultra-thin Point-of-Load Converters, USB-C Battery Chargers and other space-constrained applications
In high switching frequency applications, the high commutation slopes of the power switches require immunity against high…
In high switching frequency applications, the high commutation slopes of the power switches require immunity against high levels of common mode…
The new units are optimized for isolated and non-isolated buck, flyback, and buck-boost converters
The new units are optimized for isolated and non-isolated buck, flyback, and buck-boost converters
Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in…
Transphorm’s fifth generation of gallium nitride (GaN) FET outperforms standard Silicon carbide (SiC) solutions in power, design flexibility, and…
EPC introduces the 40 V, 3 milliohm EPC2055 eGaN FET, offering designers a device that is smaller, more efficient, and…
EPC introduces the 40 V, 3 milliohm EPC2055 eGaN FET, offering designers a device that is smaller, more efficient, and more reliable than currently…
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
The new unit leads the pack with greater reliability and efficiency at a lower cost point and at a smaller size
The new unit leads the pack with greater reliability and efficiency at a lower cost point and at a smaller size
This article highlights Mitsubishi Electric Corporation LV100 T-series IGBT modules for industrial application that will…
This article highlights Mitsubishi Electric Corporation LV100 T-series IGBT modules for industrial application that will be available for 1200V and…
Researchers from the University of Surrey developed a unique transistor that could provide greater design freedom and…
Researchers from the University of Surrey developed a unique transistor that could provide greater design freedom and simplified circuitry for…
This article highlights Maxim Integrated MAX77655 single-inductor multiple output (SIMO) power management IC (PMIC)…
This article highlights Maxim Integrated MAX77655 single-inductor multiple output (SIMO) power management IC (PMIC) that provides the…
Through the partnership between STMicroelectronics (ST) and Sanken Electric, a new family of intelligent power modules…
Through the partnership between STMicroelectronics (ST) and Sanken Electric, a new family of intelligent power modules (IPMs) to simplify HVAC…
This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more…
This article highlights EPC 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable,…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active…
Texas Instruments expands high-voltage power management portfolio of units complete with internal protections, active power management, and…
This new generation of 100 V eGaN FETs are aimed at applications in lidar, infotainment, class D audio and 48-VOUT…
This new generation of 100 V eGaN FETs are aimed at applications in lidar, infotainment, class D audio and 48-VOUT synchronous rectification
Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds…
Bizen has been verified by physical wafer results and calibration to deliver the same voltage levels, switching speeds and power handling…
EPC introduces new generation 100 V eGaN® FETs that are ideal for 48-VOUT synchronous rectification, class-D audio,…
EPC introduces new generation 100 V eGaN® FETs that are ideal for 48-VOUT synchronous rectification, class-D audio, infotainment, and lidar.
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported…
This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported a typical ON-resistance of…
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
Transphorm announced its second 900 V GaN FET is now in production, the TP90H050WS.
KEMET releases new tantalum polymer capacitors designed to provide the highest capacitance/voltage (CV) ratings in…
KEMET releases new tantalum polymer capacitors designed to provide the highest capacitance/voltage (CV) ratings in surface mount device (SMD)…
This article discusses WeEn Semiconductor's high voltage SCRs its applications and process technology.
This article discusses WeEn Semiconductor's high voltage SCRs its applications and process technology.
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