Cree announces its partnership with Gospower which focuses on the development of silicon-carbide-based power supply…
Cree announces its partnership with Gospower which focuses on the development of silicon-carbide-based power supply solutions for boosting…
Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications
Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications
The continuing trend towards more efficient energy consumption in motor drives has led to a wide offering of devices for…
The continuing trend towards more efficient energy consumption in motor drives has led to a wide offering of devices for the power stage of…
The tiny buck converters, aimed at USB-PD applications, operate over 7 to 27 VDC inputs and supply 3.3 to 21 VDC
The tiny buck converters, aimed at USB-PD applications, operate over 7 to 27 VDC inputs and supply 3.3 to 21 VDC
The German tech giant opened a new $1.2 billion wafer fab to expand its automotive chip production capacity.
The German tech giant opened a new $1.2 billion wafer fab to expand its automotive chip production capacity.
The new 250-volt device, with an RDS(ON) of 0.21Ω, offers enhanced power circuit reliability for space and military applications.
The new 250-volt device, with an RDS(ON) of 0.21Ω, offers enhanced power circuit reliability for space and military applications.
The new device combines the converter, the inverter and power factor correction (PFC) functionality in a single module
The new device combines the converter, the inverter and power factor correction (PFC) functionality in a single module
Hitachi’s High-Tech subsidiary is building a new semiconductor engineering facility in Oregon, expecting growth across…
Hitachi’s High-Tech subsidiary is building a new semiconductor engineering facility in Oregon, expecting growth across EV, autonomous driving,…
EPC’s CEO and Co-Founder Alex Lidow talks about GaN's biggest application areas and how GaN is in it for the long haul.
EPC’s CEO and Co-Founder Alex Lidow talks about GaN's biggest application areas and how GaN is in it for the long haul.
This article highlights Analog Devices LT8316 that is a micropower, high voltage flyback controller that does not require…
This article highlights Analog Devices LT8316 that is a micropower, high voltage flyback controller that does not require complicated…
The 1/8th brick sized demonstration board uses eGaN FETs switching at 1 MHz to deliver its best in class power density
The 1/8th brick sized demonstration board uses eGaN FETs switching at 1 MHz to deliver its best in class power density
ROHM’s BM2SC12xFP2-LBZ power ICs are the Quasi-resonant (QR) AC/DC converters with an integrated 1700V SiC MOSFET in a…
ROHM’s BM2SC12xFP2-LBZ power ICs are the Quasi-resonant (QR) AC/DC converters with an integrated 1700V SiC MOSFET in a single compact…
New York startup lands $498,000 from the Department of Energy to develop silicon carbide semiconductors and modules.
New York startup lands $498,000 from the Department of Energy to develop silicon carbide semiconductors and modules.
The new switchers are for the non-isolated buck and buck-boost converters and for isolated flyback designs of up to 12 Watts
The new switchers are for the non-isolated buck and buck-boost converters and for isolated flyback designs of up to 12 Watts
A group of scientists from Japan recently published a study on the development of a supposedly cheaper and non-toxic…
A group of scientists from Japan recently published a study on the development of a supposedly cheaper and non-toxic narrow-gap semiconductor…
This article highlights EPC EPC2065 and EPC2054 eGaN FETs that are higher performing, smaller, more thermally efficient,…
This article highlights EPC EPC2065 and EPC2054 eGaN FETs that are higher performing, smaller, more thermally efficient, and at a comparable cost.
In this “semiconductor basics” series, we’ll learn about the properties of the P-N junction with no external power applied.
In this “semiconductor basics” series, we’ll learn about the properties of the P-N junction with no external power applied.
The Applied Power Electronics Conference will take place this Monday through Thursday.
The Applied Power Electronics Conference will take place this Monday through Thursday.
A German semiconductor manufacturer selects Oxford Instruments Plasma Technology’s PlasmaPro 100 ALE solution for…
A German semiconductor manufacturer selects Oxford Instruments Plasma Technology’s PlasmaPro 100 ALE solution for creating gallium nitride-based…
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