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High-Temperature SiC Junction Transistors in Hermetic Packages

High-Temperature SiC Junction Transistors in Hermetic Packages

new products Dec 15, 2013 by Jeff Shepard
Monolithic DC-DC Drives 1A Load with no External Transistor Needed

Monolithic DC-DC Drives 1A Load with no External Transistor Needed

new products Dec 09, 2013 by Jeff Shepard
Split-Output Topology Improves Dynamic Behavior in SiC MOSFET Modules

Split-Output Topology Improves Dynamic Behavior in SiC MOSFET Modules

new products Dec 05, 2013 by Jeff Shepard
SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints

SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints

new products Nov 18, 2013 by Jeff Shepard
Silicon Carbide Bare Die up to 8000V from GeneSiC

Silicon Carbide Bare Die up to 8000V from GeneSiC

new products Nov 06, 2013 by Jeff Shepard
Toshiba Adds Lower-Current Devices to SiC Schottky Offering

Toshiba Adds Lower-Current Devices to SiC Schottky Offering

new products Oct 23, 2013 by Jeff Shepard
650V SiC Schottky Improves Performance in High-power Industrial Applications

650V SiC Schottky Improves Performance in High-power Industrial Applications

new products Oct 14, 2013 by Jeff Shepard
EPC Dev. Board Features Optimal Layout of Paralleled GaN FETs for Higher Currents

EPC Dev. Board Features Optimal Layout of Paralleled GaN FETs for Higher Currents

new products Oct 02, 2013 by Jeff Shepard
EPC Blurs the Line Between Power and RF Transistors with new Multi-GHz GaN Devices

EPC Blurs the Line Between Power and RF Transistors with new Multi-GHz GaN Devices

new products Sep 24, 2013 by Jeff Shepard
Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

new products Sep 24, 2013 by Jeff Shepard
80-milliohm 1200V SiC MOSFETs are Co-packaged with SiC Schottkys

80-milliohm 1200V SiC MOSFETs are Co-packaged with SiC Schottkys

new products Sep 18, 2013 by Jeff Shepard
Toshiba Expands Family of SiC Schottky Barrier Diodes

Toshiba Expands Family of SiC Schottky Barrier Diodes

new products Sep 18, 2013 by Jeff Shepard
EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

new products Sep 12, 2013 by Jeff Shepard
Improved Tandem Diodes from STMicro Offered as Economical Alternative to SiC

Improved Tandem Diodes from STMicro Offered as Economical Alternative to SiC

new products Sep 02, 2013 by Jeff Shepard
Toshiba Launches 800V Bipolar Transistor for Switching Power Supplies

Toshiba Launches 800V Bipolar Transistor for Switching Power Supplies

new products Aug 29, 2013 by Jeff Shepard
IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

new products Aug 26, 2013 by Jeff Shepard
Fujitsu Beginning to Sample 150V GaN Power Device, Production Scheduled for 2014

Fujitsu Beginning to Sample 150V GaN Power Device, Production Scheduled for 2014

new products Jul 10, 2013 by Jeff Shepard
Nitronex Introduces 48V GaN-on-Si Power Transistors

Nitronex Introduces 48V GaN-on-Si Power Transistors

new products Jun 03, 2013 by Jeff Shepard
Nitronex Qualifies 28V / 50W GaN Transistor

Nitronex Qualifies 28V / 50W GaN Transistor

new products May 28, 2013 by Jeff Shepard
SiC and GaN Again a Major Focus at PCIM Europe

SiC and GaN Again a Major Focus at PCIM Europe

new products May 15, 2013 by Power Pulse1595211359