Toshiba Expands Family of SiC Schottky Barrier Diodes

Toshiba Corporation today announced that it will expand its family of 650V silicon carbide (SiC) Schottky barrier diodes (SBD) with the addition of a 10A product to the existing line-up of 6A, 8A and 12A products. Mass production shipments will start from today. SBDs are suited for diverse applications, including power conditioners for photovoltaic power generation systems. They can also replace silicon diodes in switching power supplies, where they are 50% more efficient, according to Toshiba.

Packaged in a TO-220 configuration, the new TRS10E65C SiC SBDs feature a typical forward voltage drop of 1.5V and a maximum forward drop of 1.7V. The typical IRRM is rated at 0.42 microamps, with a maximum rating of 90 microamps. SiC power devices offer more stable operation than current silicon devices–even at high voltages and currents–as they significantly reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and their industrial applications range from servers to inverters.