This article highlights Power Integrations SCALE-iFlex gate-driver system for IGBT, hybrid and SiC MOSFET power modules…
This article highlights Power Integrations SCALE-iFlex gate-driver system for IGBT, hybrid and SiC MOSFET power modules with blocking voltages…
This article highlights Transphorm Inc. introduction of its second 900 V FET, the Gen III TP90H050WS, enhancing the…
This article highlights Transphorm Inc. introduction of its second 900 V FET, the Gen III TP90H050WS, enhancing the industry’s only 900 V GaN…
This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin…
This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option.
This article highlights AgileSwitch Augmented Switching Accelerated Development Kit or ASDAK for power electronics…
This article highlights AgileSwitch Augmented Switching Accelerated Development Kit or ASDAK for power electronics engineers working with SiC…
This article highlights Microchip’s 700V SiC MOSFETs, and 700V and 1200V SiC Schottky Barrier Diodes (SBDs) join its…
This article highlights Microchip’s 700V SiC MOSFETs, and 700V and 1200V SiC Schottky Barrier Diodes (SBDs) join its existing portfolio of SiC…
This article highlights GaN Systems fifth annual GaN Systems Cup China power supply society design competition with teams…
This article highlights GaN Systems fifth annual GaN Systems Cup China power supply society design competition with teams from leading universities…
Cree, Inc. has been selected as the exclusive silicon carbide partner for the Volkswagen Group’s “Future Automotive…
Cree, Inc. has been selected as the exclusive silicon carbide partner for the Volkswagen Group’s “Future Automotive Supply Tracks” Initiative…
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