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Power Integrations’ New IC Allows for Smaller Sized AC-DC Converter Capacitors

Power Integrations’ New IC Allows for Smaller Sized AC-DC Converter Capacitors

The new MinE-Cap IC enables engineers to employ physically smaller filter capacitors without increasing output ripple or decreasing operating…


RECOM Power Modules Feature High Levels of Integration

RECOM Power Modules Feature High Levels of Integration

The modules are fully protected against short-circuit, over-current, over-temperature and input under-voltage and are equipped with enable, power…


Microchip Releases Newest Generation of AEC-Q101 Qualified 700 and 1200V Silicon Carbide (SiC) Schottky Barrier Diode

Microchip Releases Newest Generation of AEC-Q101 Qualified 700 and 1200V Silicon Carbide (SiC) Schottky Barrier Diode

Microchip releases new generation of Silicon Carbide Schottky Barrier Diode for Automotive Applications.


Silicon Labs Grows its Offerings of Isolated Gate Drivers

Silicon Labs Grows its Offerings of Isolated Gate Drivers

New Si823Hx/825xx isolated gate drivers cut latency by 50% and increase transient immunity.


Tesla’s 4680: A Cobalt-Free Silicon Battery Solution

Tesla’s 4680: A Cobalt-Free Silicon Battery Solution

Tesla’s new 4680 battery solution offers a tabless electrode to improve thermal management and deliver 6x the amount of power while decreasing…


GeneSiC Releases 6.5kV Silicon Carbide MOSFETs

GeneSiC Releases 6.5kV Silicon Carbide MOSFETs

This article highlights GeneSiC’s 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL with full SiC modules utilizing this…


Toshiba Launches 1200V Silicon Carbide (SiC) MOSFET

Toshiba Launches 1200V Silicon Carbide (SiC) MOSFET

Toshiba Electronics Europe GmbH has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications.


EPC’s Newest 100V eGaN FET Family Outclasses Classical Silicon MOSFETs

EPC’s Newest 100V eGaN FET Family Outclasses Classical Silicon MOSFETs

This new generation of 100 V eGaN FETs are aimed at applications in lidar, infotainment, class D audio and 48-VOUT synchronous rectification


Alpha and Omega Semiconductor Introduces 4-Channel Ultra-Low Capacitance Ultra-Low Clamping Voltage TVS Array

Alpha and Omega Semiconductor Introduces 4-Channel Ultra-Low Capacitance Ultra-Low Clamping Voltage TVS Array

Alpha and Omega Semiconductor introduced a series of Transient Voltage Suppressor (TVS) for high-speed line protection using the best-in-class low…


TT Electronics Introduces New Family of Anti-Sulphur, High Reliability Thin Film Chip Resistors

TT Electronics Introduces New Family of Anti-Sulphur, High Reliability Thin Film Chip Resistors

This article highlights TT Electronics APC Series resistors with its family of high reliability surface mount resistors that have been qualified…


Alpha and Omega Semiconductor Unveils New Generation of DrMOS Power Stage

Alpha and Omega Semiconductor Unveils New Generation of DrMOS Power Stage

Alpha and Omega Semiconductor announced a new series of DrMOS targeting multiphase VR regulators powering high-performance GPU and memory in…


EPC Increases Benchmark Performance with 100V eGaN FET Family

EPC Increases Benchmark Performance with 100V eGaN FET Family

EPC introduces new generation 100 V eGaN® FETs that are ideal for 48-VOUT synchronous rectification, class-D audio, infotainment, and lidar.


Maxim Adds Two Analog Temperature Sensor IC’s to its Essential Analog Portfolio

Maxim Adds Two Analog Temperature Sensor IC’s to its Essential Analog Portfolio

The new ICs reduce design complexity while delivering the high measurement accuracy for systems charged with the protection of cold-chain assets.


Bel Fuse Announces 0685P Series of Surface Mount Fast-Acting Chip Fuses

Bel Fuse Announces 0685P Series of Surface Mount Fast-Acting Chip Fuses

This article highlights Bel Fuse's 0685P Series of surface mount fast-acting chip fuses with high inrush current withstand capability in a…


Energous And Dialog Semiconductor’s New Wireless Charging Module Provides Speed for an Array of Applications

Energous And Dialog Semiconductor’s New Wireless Charging Module Provides Speed for an Array of Applications

Energous Corporation announced a new module that integrates components provided by Dialog Semiconductor in a strategic partnership to create a…


Fraunhofer Embeds GaN Power ICs on Single Chip

Fraunhofer Embeds GaN Power ICs on Single Chip

Researchers at the Fraunhofer-Institute for Applied Solid State Physics IAF have incorporated their patented Gallium-Nitride (GaN) power ICs, DC-DC…


EPC introduces two new 200 Volt eGaN Power FETs

EPC introduces two new 200 Volt eGaN Power FETs

The EPC2215 and EPC2207 sport typical RDS(ON) ’s of 6 mΩ and 22 mΩ, respectively


Silicon Germanium Rectifiers Provide High Efficiency, Thermal Stability

Silicon Germanium Rectifiers Provide High Efficiency, Thermal Stability

AEC-Q101 approved devices with 120V, 150V, and 200V combine best attributes of Schottky and fast recovery diodes


Transphorm’s Second 900 Volt GaN FET is Now in Production

Transphorm’s Second 900 Volt GaN FET is Now in Production

This new device represents a significant improvement to the company’s first 900V device, the TP90H180PS, which sported a typical ON-resistance of…


Taiwan Semiconductor’s CMOS LED IC is Drop-in Replacement for Legacy Bipolar Drivers

Taiwan Semiconductor’s CMOS LED IC is Drop-in Replacement for Legacy Bipolar Drivers

This article highlights Taiwan Semiconductor's TSCR4 family of linear CMOS LED driver ICs that provide a much improved performance drop-in…