EPC introduces two new 200 Volt eGaN Power FETsAugust 26, 2020 by Gary Elinoff
The EPC2215 and EPC2207 sport typical RDS(ON) ’s of 6 mΩ and 22 mΩ, respectively
EPC claims that this two new eGaN (enhancement-mode gallium nitride on silicon) devices offer about twice the performance of their previous offerings while taking up only about half the board real estate. But it’s the comparison to classical silicon MOSFETs that’s the real eye-opener.
Comparison of traditional 200 volt MOSFETS to the 200 volt EPC2215. Image courtesy of EPC
As indicated in the above illustration, the EPC2215 is only 1/15th the size ot its silicon MOSFET predecessor. It also features a 33% lower RDS(ON) and an 80% lower gate-to-drain charge (QGD).And, as is the case for all GaN FETs, the EPC2215 features no reverse recovery (QRR) charge at all.
According to Alex Lidow, EPC’s co-founder and CEO, “This latest generation of eGaN FETs achieve higher performance in a smaller, more thermally efficient size, and at a comparable cost to traditional MOSFETs. The inevitable displacement of the aging power MOSFET with GaN devices are becoming clearer every day.”
Both units are specified for a maximum continuous drain-to-source (VDS) of 200 volts and VGS(gate to source voltage) can range from -4 to 6 volts. The EPC2207 sports a continuous Drain Current (ID) of 14 amps and a pulsed ID of 54 amps (TPULSE = 300 μsecond, the temperature of 25 °C). The analogous ratings for the EPC2215 are 32 and 162 amps, respectively.
Thermal characteristics are of major importance for high current devices such as eGaN FETS. The EPC2207 features junction-to-case, junction-to-board and junction-to-ambient thermal resistances of 1.4, 5.1 and 72 °C/watt, respectively. For the EP2215, the comparable figures are 0.5, 2.5, and 52 °C/watt.
Applications for the EPC2207 and the EPC2215
- BLDC Motor Drives
- Class D Audio Amplifiers
- Solar Micro Inverters
- Synchronous Rectification for DC-DC and AC/DC
- DC to DC converters
- Multilevel AC/DC power supplies
- Wireless power
A Collaboration with the University of Texas
EPC worked in conjunction with the Semiconductor Power Electronics Center (SPEC) at the University of Texas at Austin to develop a 400-volt four-level flying capacitor multilevel bridgeless totem-pole rectifier. Based on the EPC2215, the device, which is aimed at data center applications, can work with inputs equal to the maximum line voltage of 274 VAC and can deliver outputs of up to 2.5 kW.
The overall efficiency of the device reaches 99.25% at 1.4 kW and, it sports an impressive power density of 125 watts/in3.
Both of the new devices operate over a temperature range of -40 to 150 °C. They are supplied in passivated die form with solder bars.
Image courtesy of EPC
The die sizes for the EPC2207 and the EPC2215 are 2.9 x 0.9 mm and 4.6 mm x 1.6 mm, respectively. Both units are both halogen-free and RoHS certified.
Getting to Market Faster
The EPC9099 and the EPC90124 are half-bridge development boards for the EPC2215 and the EPC2207, respectively. Both boards contain two of the relevant eGaN FETs and measure 2 x 2 inches. EPC also offers a video explaining how to utilize these development boards as prototypes.
The EPC9099 Development Board. Image courtesy of EPC
Additionally, the EPC9083 is a development/demonstration board for an EPC2207-based class-E Amplifier. It can also be used for applications including current-mode Class D amplifiers and LiDAR
EPC is the leader in enhancement mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs and integrated circuits as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, automotive, power inverters, remote imaging and sensing technology (Lidar), and Class-D audio amplifiers.
EPC also has a growing portfolio of eGaN-based integrated circuits that provide space, energy, and cost-efficiency.