EEPower

Latest Silicon Carbide New Products

Categories

IDT Claims First Wireless Power Receiver IC Compatible with Both WPC and PMA Standards

IDT Claims First Wireless Power Receiver IC Compatible with Both WPC and PMA Standards

Toshiba Starts SiC Power Device Volume Production, Aims for 30% Market Share

Toshiba Starts SiC Power Device Volume Production, Aims for 30% Market Share

ROHM SiC MOS Module, without a Schottky Diode Enters High-Volume Production

ROHM SiC MOS Module, without a Schottky Diode Enters High-Volume Production

AOS Adds Buck LED Controller IC for High Efficiency and Robust Lighting Solutions

AOS Adds Buck LED Controller IC for High Efficiency and Robust Lighting Solutions

Vicor Intros New User-Defined, High-Performance VI Chip PRM Modules

Vicor Intros New User-Defined, High-Performance VI Chip PRM Modules

Allegro Adds Automotive Two-Channel Linear LED Driver IC

Allegro Adds Automotive Two-Channel Linear LED Driver IC

Global Power Device Comes out of Stealth, Launches SiC Devices

Global Power Device Comes out of Stealth, Launches SiC Devices

Intersil’s ISL6446A Dual PWM/Linear Controller Provides Efficient, Flexible Single-Chip Solution

Intersil’s ISL6446A Dual PWM/Linear Controller Provides Efficient, Flexible Single-Chip Solution

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

ROHM Claims First Mass-Produced SiC MOS Module Without a Schottky Diode

ROHM Claims First Mass-Produced SiC MOS Module Without a Schottky Diode

Renesas Unveils Low-Power Microcontroller Group with up to 1MB of On-Chip Flash

Renesas Unveils Low-Power Microcontroller Group with up to 1MB of On-Chip Flash

Mitsubishi Electric Develops 1,200V/1,200A SiC Power Module Technologies

Mitsubishi Electric Develops 1,200V/1,200A SiC Power Module Technologies

Battery “Fuel Gauge” IC Gives Reliable Runtimes for Mobile Users

Battery “Fuel Gauge” IC Gives Reliable Runtimes for Mobile Users

U.S. Unveiling of Digital Controller Technology for Solid-State Lighting by Ikon Semiconductor

U.S. Unveiling of Digital Controller Technology for Solid-State Lighting by Ikon Semiconductor

Vishay Extends Precision Series of Wide-Terminal Thin-Film Chip Resistors with Values Down to 1 Ohm

Vishay Extends Precision Series of Wide-Terminal Thin-Film Chip Resistors with Values Down to 1 Ohm