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MOSFET with High ESD Protection to Drive Headlight LEDs

MOSFET with High ESD Protection to Drive Headlight LEDs

Unidirectional TVS Diode Arrays in Smallest Footprint Available Protect IO and Power Ports from ESD

Unidirectional TVS Diode Arrays in Smallest Footprint Available Protect IO and Power Ports from ESD

Littelfuse, Inc., the global leader in circuit protection, today introduced two series of AEC-Q101-qualified, unidirectional TVS Diode Arrays.


new products Mar 29, 2018 by Littelfuse
Fixed-Frequency PWM Controller and Integrated Power FET

Fixed-Frequency PWM Controller and Integrated Power FET

High-Power GaN Converter IMS Evaluation Platform

High-Power GaN Converter IMS Evaluation Platform

1.6-kW GaN-Based 1-MHz CrM Totem-Pole PFC Reference Design

1.6-kW GaN-Based 1-MHz CrM Totem-Pole PFC Reference Design

N-channel FET driver ICs Suitable for Rapid-Charging Designs

N-channel FET driver ICs Suitable for Rapid-Charging Designs

1.8kW RF Device is Industry’s Most Powerful GaN-on-SiC Transistor

1.8kW RF Device is Industry’s Most Powerful GaN-on-SiC Transistor

GaN Power Portfolio Expanded with the Industrys Smallest and Fastest GaN Drivers

GaN Power Portfolio Expanded with the Industrys Smallest and Fastest GaN Drivers

Texas Instruments (TI) today announced two new high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing…


1200V SiC MOSFETs with Ultra-Low On-Resistances Introduced at APEC 2018

1200V SiC MOSFETs with Ultra-Low On-Resistances Introduced at APEC 2018

Littelfuse, Inc. and Monolith Semiconductor Inc. today added two 1200V silicon carbide (SiC) n‑channel, enhancement-mode MOSFETs.


new products Mar 12, 2018 by Littelfuse
GaN Power Modules Deliver Over 1400 W/in3 for 48V to 12V PoLs

GaN Power Modules Deliver Over 1400 W/in3 for 48V to 12V PoLs

eGaN ICs Combining Gate Drivers with High Frequency GaN FETs

eGaN ICs Combining Gate Drivers with High Frequency GaN FETs

Capacitors for Fast-Switching Wide Bandgap Semiconductor Applications

Capacitors for Fast-Switching Wide Bandgap Semiconductor Applications

Record-Setting 100 V/120A GaN Power Transistor

Record-Setting 100 V/120A GaN Power Transistor

1200V SiC MOSFETs with Ultra-Low On-Resistances at APEC 2018

1200V SiC MOSFETs with Ultra-Low On-Resistances at APEC 2018

TI expands GaN Power Portfolio with Smallest and Fastest GaN Drivers

TI expands GaN Power Portfolio with Smallest and Fastest GaN Drivers

650V SiC FETs Offer Drop-in Replacement for Si Superjunction FETs

650V SiC FETs Offer Drop-in Replacement for Si Superjunction FETs

650V SiC Schottkys Feature Superior Switching Performance and Higher Reliability

650V SiC Schottkys Feature Superior Switching Performance and Higher Reliability

120A / 650V GaN Power Transistor Can Double Power Conversion Density

120A / 650V GaN Power Transistor Can Double Power Conversion Density

1200V SiC MOSFETs and SiC SBDs for Industrial and Automotive Designs

1200V SiC MOSFETs and SiC SBDs for Industrial and Automotive Designs

New Ferrite for High-Frequency GaN and SiC Power Converters

New Ferrite for High-Frequency GaN and SiC Power Converters