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GaN-on-SiC Fully-Matched High-Power Transistor Offers 50W at 5-6 GHz

GaN-on-SiC Fully-Matched High-Power Transistor Offers 50W at 5-6 GHz

Renesas’ Rad-Hard 100V and 200V GaN FET DC-DC Solutions use EPC Die

Renesas’ Rad-Hard 100V and 200V GaN FET DC-DC Solutions use EPC Die

TVS Diode Arrays Protect Sensitive Telecom Ports from ESD Lightning-Induced Surges

TVS Diode Arrays Protect Sensitive Telecom Ports from ESD Lightning-Induced Surges

Littelfuse, Inc., the global leader in circuit protection, today introduced a series of AEC-Q101-qualified TVS Diode Arrays optimized to protect…


new products Feb 07, 2018 by Littelfuse
High-Voltage 3-Phase Motor Driver IC with Integrated IGBT

High-Voltage 3-Phase Motor Driver IC with Integrated IGBT

1200V GaN-based Power Modules from VisIC and TSMC

1200V GaN-based Power Modules from VisIC and TSMC

Newest Generation of XSPairFET in DFN 33x33 Package Announced

Newest Generation of XSPairFET in DFN 33x33 Package Announced

Alpha and Omega Semiconductor Limited introduced AONE36132, a 25V N-Channel MOSFET in a dual DFN 3.3x3.3 package


Over 1400V Breakdown on new GaN-on-Si Epiwafer Product

Over 1400V Breakdown on new GaN-on-Si Epiwafer Product

AEC-Q101 Qualified Dual MOSFET for Relay Drivers

AEC-Q101 Qualified Dual MOSFET for Relay Drivers

GaN Enables Compact 1kW Isolated Bidirectional DC-DCs

GaN Enables Compact 1kW Isolated Bidirectional DC-DCs

Ultra-Low Power Consumption Voltage Detection IC with MOSFET

Ultra-Low Power Consumption Voltage Detection IC with MOSFET

1200V SiC Schottky Diodes Rated for 8A, 15A and 20A

1200V SiC Schottky Diodes Rated for 8A, 15A and 20A

Expanded SiC Schottky Diode Line Reduces Switching Losses Increases Efficiency and Robustness

Expanded SiC Schottky Diode Line Reduces Switching Losses Increases Efficiency and Robustness

Littelfuse, Inc. introduced four new series of 1200V silicon carbide (SiC) Schottky Diodes from its GEN2 product family


new products Jan 16, 2018 by Littelfuse
GaN enables Ultra Wide-Band Linearized Doherty Amplifier

GaN enables Ultra Wide-Band Linearized Doherty Amplifier

Next Generation Silicon Carbide Power Device with 3DSiC Technology

Next Generation Silicon Carbide Power Device with 3DSiC Technology

Ascatron provides next generation Silicon Carbide (SiC) power semiconductors using its proprietary 3DSiC® technology with a quality and…


new products Jan 11, 2018 by Ascatron
NPC Modules with Latest IGBT Chip Tech for up to 120kVA

NPC Modules with Latest IGBT Chip Tech for up to 120kVA

High-Voltage Multi-Channel Solenoid and Unipolar Motor Driver IC

High-Voltage Multi-Channel Solenoid and Unipolar Motor Driver IC

Toshiba Electronics Europe (TEE) announced the launch of a multi-channel solenoid and unipolar motor driver IC (TB67S111PG) that delivers…


Buck-Converter with Record Step-Down Ratio

Buck-Converter with Record Step-Down Ratio

This article highlights the ROHM Semiconductor's BD9V100MUF-C, a DC/DC converter that has both high conversion ratio and high switching…


new products Jan 05, 2018 by ROHM
Three-Phase MOSFET Driver IC with On-Board Regulator

Three-Phase MOSFET Driver IC with On-Board Regulator

Half-Bridge Reference Design for Evaluating Si, SiC and GaN Power Devices

Half-Bridge Reference Design for Evaluating Si, SiC and GaN Power Devices

40V GaN Power Transistor is 8X Smaller than Equivalently-Rated MOSFETS

40V GaN Power Transistor is 8X Smaller than Equivalently-Rated MOSFETS