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GaN Enables 14mm-Thin 45W Wall Charger

GaN Enables 14mm-Thin 45W Wall Charger

UnitedSiC Introduces Kelvin Connection Parts into UF3C FAST FET Series

UnitedSiC Introduces Kelvin Connection Parts into UF3C FAST FET Series

UnitedSiC expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200 V high-performance silicon carbide FETs


Dialog Semiconductor Introduces First Fully-Integrated Nanopower PMICs for Low-Power IoT Applications

Dialog Semiconductor Introduces First Fully-Integrated Nanopower PMICs for Low-Power IoT Applications

Dialog Semiconductor unveiled its first fully-integrated nanopower PMICs for IoT applications: the DA9070 and DA9073.


Hermetic, High-Voltage Cascode GaN Power FETs

Hermetic, High-Voltage Cascode GaN Power FETs

1700V SiC Power Module Claims High Reliability in Extreme Environments

1700V SiC Power Module Claims High Reliability in Extreme Environments

High Power GaN Solutions for Server and Automotive Applications

High Power GaN Solutions for Server and Automotive Applications

TDK Adds Modular Flexassembly Technology to CeraLink Ceramic Capacitor Series

TDK Adds Modular Flexassembly Technology to CeraLink Ceramic Capacitor Series

TDK Corporation today announced it has extended the lineup of CeraLink™ capacitors to include modular flex-assembly technology with CeraLink FA…


100V Half-Bridge MOSFET Drivers for 12V-to-48V Bidirectional DC-DCs

100V Half-Bridge MOSFET Drivers for 12V-to-48V Bidirectional DC-DCs

650V Half-Bridge Gate Driver IC with Integrated Bootstrap Diode

650V Half-Bridge Gate Driver IC with Integrated Bootstrap Diode

Gen 3 600V & 1200V “FAST” Silicon Carbide FET series

Gen 3 600V & 1200V “FAST” Silicon Carbide FET series

UnitedSiC Introduces New UF3C ‘FAST’ Silicon Carbide FET Series

UnitedSiC Introduces New UF3C ‘FAST’ Silicon Carbide FET Series

UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package.


IGBT Modules Rated for 6.5kV/1,000A, 4.5kV/1,500A and 3.3kV/1,800A

IGBT Modules Rated for 6.5kV/1,000A, 4.5kV/1,500A and 3.3kV/1,800A

TI Announces New Portfolio of Ready-to-Use 600V GaN FET Power Stages

TI Announces New Portfolio of Ready-to-Use 600V GaN FET Power Stages

Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support…


GaN Systems Launches New Products and Provides GaN Design Expertise at Chinas PEAC Power Conference

GaN Systems Launches New Products and Provides GaN Design Expertise at Chinas PEAC Power Conference

GaN Systems recently announced the details of its participation at the IEEE International Power Electronics and Application Conference and…


new products Oct 30, 2018 by GaN Systems
Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

SiC MOSFETs and Digital Control enable Isolated 1U 11kW Bidirectional DC-DCs

SiC MOSFETs and Digital Control enable Isolated 1U 11kW Bidirectional DC-DCs

Gen-3 SiC JFETs with 1200V and 650V Options

Gen-3 SiC JFETs with 1200V and 650V Options

UnitedSiC Expands SiC JFET Portfolio with Gen3 1200V and 650V Options

UnitedSiC Expands SiC JFET Portfolio with Gen3 1200V and 650V Options

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, announces its Generation 3 1200 V and 650 V silicon carbide JFETs,…


DC-DCs Optimized for Radio Frequency Power Amplifiers using GaN Transistors

DC-DCs Optimized for Radio Frequency Power Amplifiers using GaN Transistors

Littelfuse Announces 1700V, 1-Ohm SiC MOSFET

Littelfuse Announces 1700V, 1-Ohm SiC MOSFET