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1200V, 450A Half-Bridge Module Maximizes the Benefits of SiC

1200V, 450A Half-Bridge Module Maximizes the Benefits of SiC

Fraunhofer Institute for Solar Energy Systems ISE Inaugurates Center for Power Electronics and Sustainable Grids

Fraunhofer Institute for Solar Energy Systems ISE Inaugurates Center for Power Electronics and Sustainable Grids

On July 4, 2019, the Fraunhofer Institute for Solar Energy Systems ISE in Freiburg officially inaugurated its new Center for Power Electronics and…


Isolated Gate Drivers with Integrated Sensing for IGBTs and SiC MOSFETs

Isolated Gate Drivers with Integrated Sensing for IGBTs and SiC MOSFETs

This article highlights Texas Instruments UCC21710-Q1, UCC21732-Q1 and UCC21750 gate drivers that provide levels of monitoring and protection for…


200kW SiC Inverter Evaluation System

200kW SiC Inverter Evaluation System

This article highlights Pre-Switch, Inc. CleanWave 200kW SiC automotive inverter evaluation system for soft switching architecture and platform.


new products Jul 03, 2019 by Pre-Switch
productronica 2019 Highlights Semiconductors at the Core of Electronics Production

productronica 2019 Highlights Semiconductors at the Core of Electronics Production

From November 12 to 15, 2019, productronica, together with SEMICON Europa, which takes place at the same time, will organize the largest…


PCIM Asia unique platform for power electronics in Asia closes with positive resonance

PCIM Asia unique platform for power electronics in Asia closes with positive resonance

This article highlights PCIM 2019 with total of 81 exhibitors presented the latest trends and product innovations for all application of power…


new products Jun 28, 2019 by PCIM Asia
Gate-Driver System Targets 1.7kV to 4.5kV IGBT and SiC Dual Power Modules

Gate-Driver System Targets 1.7kV to 4.5kV IGBT and SiC Dual Power Modules

Alpha and Omega Semiconductor Releases 700V and 600V MOS5 Super Junction MOSFETs in 300mm Fab

Alpha and Omega Semiconductor Releases 700V and 600V MOS5 Super Junction MOSFETs in 300mm Fab

This article highlights Alpha and Omega Semiconductor announcement the release of 700V and 600V αMOS5™ Super Junction MOSFET families in 300mm…


900V GaN FETs Support 8kW in Typical Half-Bridge Configuration

900V GaN FETs Support 8kW in Typical Half-Bridge Configuration

Highly Flexible Gate-Driver System from Power Integrations Targets New 17 kV to 45 kV IGBT and SiC Dual Power Modules

Highly Flexible Gate-Driver System from Power Integrations Targets New 17 kV to 45 kV IGBT and SiC Dual Power Modules

This article highlights Power Integrations SCALE-iFlex gate-driver system for IGBT, hybrid and SiC MOSFET power modules with blocking voltages…


Transphorm Strengthens 900 V GaN Portfolio with Second FET

Transphorm Strengthens 900 V GaN Portfolio with Second FET

This article highlights Transphorm Inc. introduction of its second 900 V FET, the Gen III TP90H050WS, enhancing the industry’s only 900 V GaN…


new products Jun 25, 2019 by Transphorm
SiC Module enables >98% Efficient 300kW Three-Phase Inverter Reference Design

SiC Module enables >98% Efficient 300kW Three-Phase Inverter Reference Design

Fuji Electric Launches 7400WXT3U a High-Capacity Uninterruptible Power Supply System for Overseas Markets

Fuji Electric Launches 7400WXT3U a High-Capacity Uninterruptible Power Supply System for Overseas Markets

Fuji Electric Co., Ltd. is pleased to announce the launch of the 7400WX-T3U, a high-capacity uninterruptible power supply system (UPS), to…


UnitedSiC adds 4-lead Kelvin 1200V/150mΩ SiC FET

UnitedSiC adds 4-lead Kelvin 1200V/150mΩ SiC FET

UnitedSiC adds new 4-lead Kelvin device to UF3C FAST FET series

UnitedSiC adds new 4-lead Kelvin device to UF3C FAST FET series

This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option.


Metal Composite Power Inductors for HV Applications including GaN-Based Converters

Metal Composite Power Inductors for HV Applications including GaN-Based Converters

600-V 150mΩ 6-A Single-Channel GaN Power Stage

600-V 150mΩ 6-A Single-Channel GaN Power Stage

1200V / 150A SiC-MOSFET Module Features High Reliability and Low Losses

1200V / 150A SiC-MOSFET Module Features High Reliability and Low Losses

AMR-Based Current Sensors Suited for SiC- and GaN-based Applications

AMR-Based Current Sensors Suited for SiC- and GaN-based Applications

Unlock the Full Potential of SiC MOSFET Modules

Unlock the Full Potential of SiC MOSFET Modules

This article highlights AgileSwitch Augmented Switching Accelerated Development Kit or ASDAK for power electronics engineers working with SiC…