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Toshiba Debuts 600V Super Junction MOSFET DTMOS IV High Speed Diode Series

Toshiba Debuts 600V Super Junction MOSFET DTMOS IV High Speed Diode Series

ROHM SiC MOS Module, without a Schottky Diode Enters High-Volume Production

ROHM SiC MOS Module, without a Schottky Diode Enters High-Volume Production

20-V P-Channel FET in 3.3-mm Square Package with On-Resistance of 4.8 mΩ Added by Vishay

20-V P-Channel FET in 3.3-mm Square Package with On-Resistance of 4.8 mΩ Added by Vishay

Microsemi Adds Multiple Devices to NPT IGBT Product Family

Microsemi Adds Multiple Devices to NPT IGBT Product Family

Transphorm Releases First JEDEC-Qualified 600V GaN-on-Silicon Power Devices

Transphorm Releases First JEDEC-Qualified 600V GaN-on-Silicon Power Devices

Global Power Device Comes out of Stealth, Launches SiC Devices

Global Power Device Comes out of Stealth, Launches SiC Devices

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

Toshiba Launches 100V Low ON-Resistance N-ch Power MOSFET for Automotive Applications

Toshiba Launches 100V Low ON-Resistance N-ch Power MOSFET for Automotive Applications

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

IXYS Integrates Thyristor and IGBT to offer “Ideal Phase Leg” for Energy-Efficient Applications

IXYS Integrates Thyristor and IGBT to offer “Ideal Phase Leg” for Energy-Efficient Applications

Integrated-FET Buck DC-DCs from Micrel Provide Optimized Solution Costs For 12V Input Rails

Integrated-FET Buck DC-DCs from Micrel Provide Optimized Solution Costs For 12V Input Rails

Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

ROHM Claims First Mass-Produced SiC MOS Module Without a Schottky Diode

ROHM Claims First Mass-Produced SiC MOS Module Without a Schottky Diode

Mitsubishi to Launch MOSFET-based Super-mini DIPIPM for 3-Phase Inverters

Mitsubishi to Launch MOSFET-based Super-mini DIPIPM for 3-Phase Inverters

Alpha and Omega Releases Robust 600V AlphaMOS-II MOSFET Family

Alpha and Omega Releases Robust 600V AlphaMOS-II MOSFET Family

Mitsubishi Electric Develops 1,200V/1,200A SiC Power Module Technologies

Mitsubishi Electric Develops 1,200V/1,200A SiC Power Module Technologies

U.S. Unveiling of Digital Controller Technology for Solid-State Lighting by Ikon Semiconductor

U.S. Unveiling of Digital Controller Technology for Solid-State Lighting by Ikon Semiconductor